PMID- 29266157
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180806
LR  - 20180806
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 10
IP  - 3
DP  - 2018 Jan 18
TI  - Large-area niobium disulfide thin films as transparent electrodes for devices 
      based on two-dimensional materials.
PG  - 1056-1062
LID - 10.1039/c7nr07593f [doi]
AB  - Direct contacts of a metal with atomically thin two-dimensional (2D) transition 
      metal dichalcogenide (TMDC) semiconductors have been found to suppress device 
      performance by producing a high contact resistance. NbS(2) is a 2D TMDC and a 
      conductor. It is expected to form ohmic contacts with 2D semiconductors because 
      of its high work function and the van der Waals interface it forms with the 
      semiconductor, with such an interface resulting in weak Fermi level pinning. 
      Despite the usefulness of NbS(2) as an electrode, previous synthesis methods 
      could not control the thickness, uniformity, and shape of the NbS(2) film and 
      hence could not find practical applications in electronics. Here, we report a 
      patternable method for carrying out the synthesis of NbS(2) films in which the 
      number of NbS(2) layers formed over a large area was successfully controlled, 
      which is necessary for the production of customized electrodes. The synthesized 
      NbS(2) films were shown to be highly transparent and uniform in thickness and 
      conductivity over the large area. Furthermore, the synthesized NbS(2) showed half 
      the contact resistance than did the molybdenum metal in MoS(2) field effect 
      transistors (FETs) on a large transparent quartz substrate. The MoS(2) device 
      with NbS(2) showed an electron mobility as high as 12.7 cm(2) V(-1) s(-1), which 
      was three times higher than that found for the corresponding molybdenum-contacted 
      MoS(2) device. This result showed the high potential of the NbS(2) thin film as a 
      transparent electrode for 2D transition metal dichalcogenide (TMDC) 
      semiconductors with low contact resistance.
FAU - Bark, Hunyoung
AU  - Bark H
AD  - SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 
      Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Korea. peterlee@skku.edu.
FAU - Choi, Yongsuk
AU  - Choi Y
FAU - Jung, Jaehyuck
AU  - Jung J
FAU - Kim, Jung Hwa
AU  - Kim JH
FAU - Kwon, Hyukjoon
AU  - Kwon H
FAU - Lee, Jinhwan
AU  - Lee J
FAU - Lee, Zonghoon
AU  - Lee Z
FAU - Cho, Jeong Ho
AU  - Cho JH
FAU - Lee, Changgu
AU  - Lee C
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2017/12/22 06:00
MHDA- 2017/12/22 06:01
CRDT- 2017/12/22 06:00
PHST- 2017/12/22 06:00 [pubmed]
PHST- 2017/12/22 06:01 [medline]
PHST- 2017/12/22 06:00 [entrez]
AID - 10.1039/c7nr07593f [doi]
PST - ppublish
SO  - Nanoscale. 2018 Jan 18;10(3):1056-1062. doi: 10.1039/c7nr07593f.