PMID- 29266512 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180801 LR - 20201001 IS - 1521-4095 (Electronic) IS - 0935-9648 (Linking) VI - 30 IP - 6 DP - 2018 Feb TI - A Black Phosphorus Carbide Infrared Phototransistor. LID - 10.1002/adma.201705039 [doi] AB - Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W(-1) and a shot noise equivalent power of 1.3 fW Hz(-1/2) at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V. CI - (c) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. FAU - Tan, Wee Chong AU - Tan WC AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. AD - Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore. FAU - Huang, Li AU - Huang L AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. AD - Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore. FAU - Ng, Rui Jie AU - Ng RJ AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. AD - Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore. FAU - Wang, Lin AU - Wang L AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. AD - Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore. FAU - Hasan, Dihan Md Nuruddin AU - Hasan DMN AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. FAU - Duffin, Thorin Jake AU - Duffin TJ AD - Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore. AD - NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore. AD - Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore. AD - National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore. FAU - Kumar, Karuppannan Senthil AU - Kumar KS AD - Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore. AD - NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore. AD - Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore. AD - National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore. FAU - Nijhuis, Christian A AU - Nijhuis CA AD - Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore. AD - NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore. AD - Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, Singapore, 1175464, Singapore. AD - National University of Singapore Graduate School for Integrative Sciences and Engineering, National University of Singapore, 28 Medical Drive, Singapore, 117456, Singapore. FAU - Lee, Chengkuo AU - Lee C AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. FAU - Ang, Kah-Wee AU - Ang KW AUID- ORCID: 0000-0003-1919-3351 AD - Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117583, Singapore. AD - Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore, 117543, Singapore. LA - eng PT - Journal Article DEP - 20171221 PL - Germany TA - Adv Mater JT - Advanced materials (Deerfield Beach, Fla.) JID - 9885358 OTO - NOTNLM OT - black phosphorus carbide OT - broadband detectors OT - infrared detectors OT - low noise OT - tunable responsivity EDAT- 2017/12/22 06:00 MHDA- 2017/12/22 06:01 CRDT- 2017/12/22 06:00 PHST- 2017/09/04 00:00 [received] PHST- 2017/10/04 00:00 [revised] PHST- 2017/12/22 06:00 [pubmed] PHST- 2017/12/22 06:01 [medline] PHST- 2017/12/22 06:00 [entrez] AID - 10.1002/adma.201705039 [doi] PST - ppublish SO - Adv Mater. 2018 Feb;30(6). doi: 10.1002/adma.201705039. Epub 2017 Dec 21.