PMID- 29318882
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180731
LR  - 20180731
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 4
DP  - 2018 Jan 31
TI  - Charge-Transfer-Induced p-Type Channel in MoS(2) Flake Field Effect Transistors.
PG  - 4206-4212
LID - 10.1021/acsami.7b15863 [doi]
AB  - The two-dimensional transition-metal dichalcogenide semiconductor MoS(2) has 
      received extensive attention for decades because of its outstanding electrical 
      and mechanical properties for next-generation devices. One weakness of MoS(2), 
      however, is that it shows only n-type conduction, revealing its limitations for 
      homogeneous PN diodes and complementary inverters. Here, we introduce a 
      charge-transfer method to modify the conduction property of MoS(2) from n- to 
      p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS(2) 
      flake so that electron charges might be transferred from MoS(2) to IGZO during 
      air ambient annealing. As a result, electron charges were depleted in MoS(2). 
      Such charge depletion lowered the MoS(2) Fermi level, which makes hole conduction 
      favorable in MoS(2) when optimum source/drain electrodes with a high work 
      function are selected. Our IGZO-supported MoS(2) flake field effect transistors 
      (FETs) clearly display channel-type conversion from n- to p-channel in this way. 
      Under short- and long-annealing conditions, n- and p-channel MoS(2) FETs are 
      achieved, respectively, and a low-voltage complementary inverter is demonstrated 
      using both channels in a single MoS(2) flake.
FAU - Min, Sung-Wook
AU  - Min SW
AD  - Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, 
      Korea.
FAU - Yoon, Minho
AU  - Yoon M
AUID- ORCID: 0000-0003-3096-6116
AD  - Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, 
      Korea.
FAU - Yang, Sung Jin
AU  - Yang SJ
AD  - Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, 
      Korea.
FAU - Ko, Kyeong Rok
AU  - Ko KR
AD  - Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, 
      Korea.
FAU - Im, Seongil
AU  - Im S
AUID- ORCID: 0000-0003-0723-5075
AD  - Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, 
      Korea.
LA  - eng
PT  - Journal Article
DEP - 20180118
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - IGZO
OT  - MoS2
OT  - charge-transfer
OT  - field effect transistor
OT  - n-channel
OT  - p-channel
OT  - transition-metal dichalcogenide
OT  - two-dimensional semiconductor
EDAT- 2018/01/11 06:00
MHDA- 2018/01/11 06:01
CRDT- 2018/01/11 06:00
PHST- 2018/01/11 06:00 [pubmed]
PHST- 2018/01/11 06:01 [medline]
PHST- 2018/01/11 06:00 [entrez]
AID - 10.1021/acsami.7b15863 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Jan 31;10(4):4206-4212. doi: 
      10.1021/acsami.7b15863. Epub 2018 Jan 18.