PMID- 29345248
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 29
IP  - 11
DP  - 2018 Mar 16
TI  - Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors.
PG  - 115204
LID - 10.1088/1361-6528/aaa8b3 [doi]
AB  - Recently, ZnO nanowire field effect transistors (FETs) have received renewed 
      interest due to their extraordinary low dimensionality and high sensitivity to 
      external chemical environments and illumination conditions. These prominent 
      properties have promising potential in nanoscale chemical and photo-sensors. In 
      this article, we have fabricated ZnO nanowire FETs and have found hysteresis 
      behavior in their transfer characteristics. The mechanism and dynamics of the 
      hysteresis phenomena have been investigated in detail by varying the sweeping 
      rate and range of the gate bias with and without light irradiation. 
      Significantly, light irradiation is of great importance on charge trapping by 
      regulating adsorption and desorption of oxygen at the interface of ZnO/SiO(2). 
      Carriers excited by light irradiation can dramatically promote 
      trapping/detrapping processes. With the assistance of light illumination, we have 
      demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire 
      FET. The device exhibits reliable programming/erasing operations and a large 
      on/off ratio. The proposed proto-type memory has thus provided a possible novel 
      path for creating a memory functionality to other low-dimensional material 
      systems.
FAU - Du, Qianqian
AU  - Du Q
AD  - School of Electronic Science and Engineering and Collaborative Innovation Center 
      of Solid State Lighting and Energy-saving Electronics, Nanjing University, 
      Nanjing 210093, People's Republic of China.
FAU - Ye, Jiandong
AU  - Ye J
FAU - Xu, Zhonghua
AU  - Xu Z
FAU - Zhu, Shunming
AU  - Zhu S
FAU - Tang, Kun
AU  - Tang K
FAU - Gu, Shulin
AU  - Gu S
FAU - Zheng, Youdou
AU  - Zheng Y
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2018/01/19 06:00
MHDA- 2018/01/19 06:01
CRDT- 2018/01/19 06:00
PHST- 2018/01/19 06:00 [pubmed]
PHST- 2018/01/19 06:01 [medline]
PHST- 2018/01/19 06:00 [entrez]
AID - 10.1088/1361-6528/aaa8b3 [doi]
PST - ppublish
SO  - Nanotechnology. 2018 Mar 16;29(11):115204. doi: 10.1088/1361-6528/aaa8b3.