PMID- 29354351
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2190-4286 (Print)
IS  - 2190-4286 (Electronic)
IS  - 2190-4286 (Linking)
VI  - 8
DP  - 2017
TI  - Electro-optical characteristics of a liquid crystal cell with graphene 
      electrodes.
PG  - 2802-2806
LID - 10.3762/bjnano.8.279 [doi]
AB  - In liquid crystal devices (LCDs) the indium tin oxide (ITO) films are 
      traditionally used as transparent and conductive electrodes. However, today, due 
      to the development of multichannel optical communication, the need for flexible 
      LCDs and multilayer structures has grown. For this application ITO films cannot 
      be used in principle. For this problem, graphene (an ultrathin material with 
      unique properties, e.g., high optical transparency, chemical inertness, excellent 
      conductivity) is an excellent candidate. In this work, the electro-optical and 
      dynamic characteristics of a liquid crystal (LC) cell with graphene and ITO 
      transparent conducting layers are investigated. To insure uniform thickness of 
      the LC layer, as well as the same orientation boundary conditions, a hybrid LC 
      cell containing graphene and ITO conductive layers has been prepared. The 
      characteristics of LC cells with both types of conducting layers were found to be 
      similar, indicating that graphene can be successfully used as a transparent 
      conductive layer in LC devices.
FAU - Hakobyan, Nune H
AU  - Hakobyan NH
AD  - Center of Semiconductor Devices and Nanotechnologies, Yerevan State University, 1 
      Alex Manoogian Str., Yerevan 0025, Armenia.
FAU - Margaryan, Hakob L
AU  - Margaryan HL
AD  - Center of Semiconductor Devices and Nanotechnologies, Yerevan State University, 1 
      Alex Manoogian Str., Yerevan 0025, Armenia.
FAU - Abrahamyan, Valeri K
AU  - Abrahamyan VK
AD  - Center of Semiconductor Devices and Nanotechnologies, Yerevan State University, 1 
      Alex Manoogian Str., Yerevan 0025, Armenia.
FAU - Aroutiounian, Vladimir M
AU  - Aroutiounian VM
AD  - Center of Semiconductor Devices and Nanotechnologies, Yerevan State University, 1 
      Alex Manoogian Str., Yerevan 0025, Armenia.
FAU - Dilanchian Gharghani, Arpi S
AU  - Dilanchian Gharghani AS
AD  - Center of Semiconductor Devices and Nanotechnologies, Yerevan State University, 1 
      Alex Manoogian Str., Yerevan 0025, Armenia.
FAU - Kostanyan, Amalya B
AU  - Kostanyan AB
AD  - Centre of Molecular Materials for Photonics and Electronics, Department of 
      Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, 
      UK.
FAU - Wilkinson, Timothy D
AU  - Wilkinson TD
AUID- ORCID: 0000-0001-8885-1288
AD  - Centre of Molecular Materials for Photonics and Electronics, Department of 
      Engineering, University of Cambridge, 9 J. J. Thomson Avenue, Cambridge, CB3 0FA, 
      UK.
FAU - Tabirian, Nelson
AU  - Tabirian N
AD  - BEAM Co., 1300 Lee Road, Orlando, FL, 32810, USA.
LA  - eng
PT  - Journal Article
DEP - 20171228
PL  - Germany
TA  - Beilstein J Nanotechnol
JT  - Beilstein journal of nanotechnology
JID - 101551563
PMC - PMC5753139
OTO - NOTNLM
OT  - ITO
OT  - conductive layer
OT  - graphene
OT  - liquid crystal cell
OT  - optical switching time
EDAT- 2018/01/23 06:00
MHDA- 2018/01/23 06:01
PMCR- 2017/12/28
CRDT- 2018/01/23 06:00
PHST- 2017/07/27 00:00 [received]
PHST- 2017/11/29 00:00 [accepted]
PHST- 2018/01/23 06:00 [entrez]
PHST- 2018/01/23 06:00 [pubmed]
PHST- 2018/01/23 06:01 [medline]
PHST- 2017/12/28 00:00 [pmc-release]
AID - 10.3762/bjnano.8.279 [doi]
PST - epublish
SO  - Beilstein J Nanotechnol. 2017 Dec 28;8:2802-2806. doi: 10.3762/bjnano.8.279. 
      eCollection 2017.