PMID- 29388427
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180730
LR  - 20180730
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 8
DP  - 2018 Feb 28
TI  - Low-Frequency Noise in Layered ReS(2) Field Effect Transistors on HfO(2) and Its 
      Application for pH Sensing.
PG  - 7248-7255
LID - 10.1021/acsami.8b00193 [doi]
AB  - Layered rhenium disulfide (ReS(2)) field effect transistors (FETs), with 
      thickness ranging from few to dozens of layers, are demonstrated on 20 nm thick 
      HfO(2)/Si substrates. A small threshold voltage of -0.25 V, high on/off current 
      ratio of up to  approximately 10(7), small subthreshold swing of 116 mV/dec, and electron 
      carrier mobility of 6.02 cm(2)/V.s are obtained for the two-layer ReS(2) FETs. 
      Low-frequency noise characteristics in ReS(2) FETs are analyzed for the first 
      time, and it is found that the carrier number fluctuation mechanism well 
      describes the flicker (1/f) noise of ReS(2) FETs with different thicknesses. pH 
      sensing using a two-layer ReS(2) FET with HfO(2) as a sensing oxide is then 
      demonstrated with a voltage sensitivity of 54.8 mV/pH and a current sensitivity 
      of 126. The noise characteristics of the ReS(2) FET-based pH sensors are also 
      examined, and a corresponding detection limit of 0.0132 pH is obtained. Our 
      studies suggest the high potential of ReS(2) for future low-power nanoelectronics 
      and biosensor applications.
FAU - Liao, Wugang
AU  - Liao W
AUID- ORCID: 0000-0002-1461-2222
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore , 4 Engineering Drive 3, 117583, Singapore.
AD  - Centre for Advanced 2D Materials and Graphene Research Centre, National 
      University of Singapore , 6 Science Drive 2, 117546, Singapore.
FAU - Wei, Wei
AU  - Wei W
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore , 4 Engineering Drive 3, 117583, Singapore.
AD  - Centre for Advanced 2D Materials and Graphene Research Centre, National 
      University of Singapore , 6 Science Drive 2, 117546, Singapore.
FAU - Tong, Yu
AU  - Tong Y
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore , 4 Engineering Drive 3, 117583, Singapore.
AD  - Centre for Advanced 2D Materials and Graphene Research Centre, National 
      University of Singapore , 6 Science Drive 2, 117546, Singapore.
FAU - Chim, Wai Kin
AU  - Chim WK
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore , 4 Engineering Drive 3, 117583, Singapore.
FAU - Zhu, Chunxiang
AU  - Zhu C
AUID- ORCID: 0000-0002-6548-5366
AD  - Department of Electrical and Computer Engineering, National University of 
      Singapore , 4 Engineering Drive 3, 117583, Singapore.
AD  - Centre for Advanced 2D Materials and Graphene Research Centre, National 
      University of Singapore , 6 Science Drive 2, 117546, Singapore.
LA  - eng
PT  - Journal Article
DEP - 20180212
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - 2D material
OT  - detection limit
OT  - low-frequency noise
OT  - pH sensing
OT  - rhenium disulfide
EDAT- 2018/02/02 06:00
MHDA- 2018/02/02 06:01
CRDT- 2018/02/02 06:00
PHST- 2018/02/02 06:00 [pubmed]
PHST- 2018/02/02 06:01 [medline]
PHST- 2018/02/02 06:00 [entrez]
AID - 10.1021/acsami.8b00193 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Feb 28;10(8):7248-7255. doi: 
      10.1021/acsami.8b00193. Epub 2018 Feb 12.