PMID- 29513275
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 29
IP  - 22
DP  - 2018 Jun 1
TI  - Soft-type trap-induced degradation of MoS(2) field effect transistors.
PG  - 22LT01
LID - 10.1088/1361-6528/aab4d3 [doi]
AB  - The practical applicability of electronic devices is largely determined by the 
      reliability of field effect transistors (FETs), necessitating constant searches 
      for new and better-performing semiconductors. We investigated the stress-induced 
      degradation of MoS(2) multilayer FETs, revealing a steady decrease of drain 
      current by 56% from the initial value after 30 min. The drain current recovers to 
      the initial state when the transistor is completely turned off, indicating the 
      roles of soft-traps in the apparent degradation. The noise current power spectrum 
      follows the model of carrier number fluctuation-correlated mobility fluctuation 
      (CNF-CMF) regardless of stress time. However, the reduction of the drain current 
      was well fitted to the increase of the trap density based on the CNF-CMF model, 
      attributing the presence of the soft-type traps of dielectric oxides to the 
      degradation of the MoS(2) FETs.
FAU - Cho, Young-Hoon
AU  - Cho YH
AD  - School of Electrical Engineering, Korea University, Seoul 02841, Republic of 
      Korea. Samsung Electronics Co. Ltd, 1 Samsung-ro, Yongin-si, Gyeonggi-do 17113, 
      Republic of Korea.
FAU - Ryu, Min-Yeul
AU  - Ryu MY
FAU - Lee, Kook Jin
AU  - Lee KJ
FAU - Park, So Jeong
AU  - Park SJ
FAU - Choi, Jun Hee
AU  - Choi JH
FAU - Lee, Byung-Chul
AU  - Lee BC
FAU - Kim, Wungyeon
AU  - Kim W
FAU - Kim, Gyu-Tae
AU  - Kim GT
LA  - eng
PT  - Journal Article
DEP - 20180307
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2018/03/08 06:00
MHDA- 2018/03/08 06:01
CRDT- 2018/03/08 06:00
PHST- 2018/03/08 06:00 [pubmed]
PHST- 2018/03/08 06:01 [medline]
PHST- 2018/03/08 06:00 [entrez]
AID - 10.1088/1361-6528/aab4d3 [doi]
PST - ppublish
SO  - Nanotechnology. 2018 Jun 1;29(22):22LT01. doi: 10.1088/1361-6528/aab4d3. Epub 
      2018 Mar 7.