PMID- 29630184
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180413
LR  - 20190715
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 17
IP  - 1
DP  - 2017 Jan
TI  - Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in 
      AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC.
PG  - 577-80
AB  - We investigated the correlation between the crystal quality and two-dimensional 
      electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor 
      (HEMT) structure grown by metal-organic chemical vapor deposition. For the 
      structure with an AlN nucleation layer grown at 1100  degrees C, the 2DEG mobility and 
      sheet carrier density were 1627 cm(2)/V.s and 3.23 x 10(1)(3) cm(-)(2), respectively, at 
      room temperature. Further, it was confirmed that the edge dislocation density of 
      the GaN buffer layer was related to the 2DEG mobility and sheet carrier density 
      in the AlGaN/GaN HEMT.
FAU - Heo, Cheon
AU  - Heo C
FAU - Jang, Jongjin
AU  - Jang J
FAU - Lee, Kyngjae
AU  - Lee K
FAU - So, Byungchan
AU  - So B
FAU - Lee, Kyungbae
AU  - Lee K
FAU - Ko, Kwangse
AU  - Ko K
FAU - Nam, Okhyun
AU  - Nam O
LA  - eng
PT  - Journal Article
PT  - Research Support, Non-U.S. Gov't
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
OTO - NOTNLM
OT  - *MOCVD
OT  - *AlGaN/GaN HEMT
OT  - *Edge and Screw Dislocation
OT  - *2DEG
OT  - *Mobility
OT  - *Carrier Density
EDAT- 2017/01/01 00:00
MHDA- 2017/01/01 00:01
CRDT- 2018/04/10 06:00
PHST- 2018/04/10 06:00 [entrez]
PHST- 2017/01/01 00:00 [pubmed]
PHST- 2017/01/01 00:01 [medline]
AID - 10.1166/jnn.2017.12428 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2017 Jan;17(1):577-80. doi: 10.1166/jnn.2017.12428.