PMID- 29695112
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180503
LR  - 20181114
IS  - 1424-8220 (Electronic)
IS  - 1424-8220 (Linking)
VI  - 18
IP  - 5
DP  - 2018 Apr 24
TI  - High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.
LID - 10.3390/s18051314 [doi]
LID - 1314
AB  - The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better 
      performances compared with the traditional AlGaN/GaN HEMTs. The present work 
      investigated the pH sensor functionality of an analogous HEMT AlInN/GaN device 
      with an open gate. It was shown that the Al(0.83)In(0.17)N/GaN device 
      demonstrates excellent pH sense functionality in aqueous solutions, exhibiting 
      higher sensitivity (−30.83 μA/pH for AlInN/GaN and −4.6 μA/pH 
      for AlGaN/GaN) and a faster response time, lower degradation and good stability 
      with respect to the AlGaN/GaN device, which is attributed to higher 
      two-dimensional electron gas (2DEG) density and a thinner barrier layer in 
      Al(0.83)In(0.17)N/GaN owning to lattice matching. On the other hand, the open 
      gate geometry was found to affect the pH sensitivity obviously. Properly 
      increasing the width and shortening the length of the open gate area could 
      enhance the sensitivity. However, when the open gate width is too larger or too 
      small, the pH sensitivity would be suppressed conversely. Designing an optimal 
      ratio of the width to the length is important for achieving high sensitivity. 
      This work suggests that the AlInN/GaN-based 2DEG carrier modulated devices would 
      be good candidates for high-performance pH sensors and other related 
      applications.
FAU - Dong, Yan
AU  - Dong Y
AUID- ORCID: 0000-0001-8691-0782
AD  - School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, 
      China. yandong199@smail.nju.edu.cn.
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. yandong199@smail.nju.edu.cn.
FAU - Son, Dong-Hyeok
AU  - Son DH
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. dhson@ee.knu.ac.kr.
FAU - Dai, Quan
AU  - Dai Q
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. dqfight@hotmail.com.
FAU - Lee, Jun-Hyeok
AU  - Lee JH
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. ljh0621@knu.ac.kr.
FAU - Won, Chul-Ho
AU  - Won CH
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. chwon@ee.knu.ac.kr.
FAU - Kim, Jeong-Gil
AU  - Kim JG
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. jgkims2@ee.knu.ac.kr.
FAU - Chen, Dunjun
AU  - Chen D
AD  - School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, 
      China. djchen@nju.edu.cn.
FAU - Lee, Jung-Hee
AU  - Lee JH
AD  - School of Electronics Engineering, Kyungpook National University, Daegu 702-701, 
      Korea. jlee@ee.knu.ac.kr.
FAU - Lu, Hai
AU  - Lu H
AD  - School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, 
      China. hailu@nju.edu.cn.
FAU - Zhang, Rong
AU  - Zhang R
AD  - School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, 
      China. rzhang@nju.edu.cn.
FAU - Zheng, Youdou
AU  - Zheng Y
AD  - School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, 
      China. ydzheng@nju.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20180424
PL  - Switzerland
TA  - Sensors (Basel)
JT  - Sensors (Basel, Switzerland)
JID - 101204366
PMC - PMC5982566
OTO - NOTNLM
OT  - AlGaN
OT  - AlInN/GaN
OT  - HEMT
OT  - open gate geometry
OT  - pH sensor
COIS- The authors declare no conflict of interest.
EDAT- 2018/04/27 06:00
MHDA- 2018/04/27 06:01
PMCR- 2018/05/01
CRDT- 2018/04/27 06:00
PHST- 2018/03/04 00:00 [received]
PHST- 2018/04/12 00:00 [revised]
PHST- 2018/04/21 00:00 [accepted]
PHST- 2018/04/27 06:00 [entrez]
PHST- 2018/04/27 06:00 [pubmed]
PHST- 2018/04/27 06:01 [medline]
PHST- 2018/05/01 00:00 [pmc-release]
AID - s18051314 [pii]
AID - sensors-18-01314 [pii]
AID - 10.3390/s18051314 [doi]
PST - epublish
SO  - Sensors (Basel). 2018 Apr 24;18(5):1314. doi: 10.3390/s18051314.