PMID- 29786609
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 29
IP  - 33
DP  - 2018 Aug 17
TI  - Comparison of trapped charges and hysteresis behavior in hBN encapsulated single 
      MoS(2) flake based field effect transistors on SiO(2) and hBN substrates.
PG  - 335202
LID - 10.1088/1361-6528/aac6b0 [doi]
AB  - Molybdenum disulfide (MoS(2)) based field effect transistors (FETs) are of 
      considerable interest in electronic and opto-electronic applications but often 
      have large hysteresis and threshold voltage instabilities. In this study, by 
      using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated 
      FETs based on a single, homogeneous and atomic-thin MoS(2) flake are fabricated 
      on hBN and SiO(2) substrates. This allows for a better and a precise comparison 
      between the charge traps at the semiconductor-dielectric interfaces at 
      MoS(2)-SiO(2) and hBN interfaces. The impact of ambient environment and entities 
      on hysteresis is minimized by encapsulating the active MoS(2) layer with a single 
      hBN on both the devices. The device to device variations induced by different 
      MoS(2) layer is also eliminated by employing a single MoS(2) layer for 
      fabricating both devices. After eliminating these additional factors which induce 
      variation in the device characteristics, it is found from the measurements that 
      the trapped charge density is reduced to 1.9 x 10(11) cm(-2) on hBN substrate as 
      compared to 1.1 x 10(12) cm(-2) on SiO(2) substrate. Further, reduced hysteresis 
      and stable threshold voltage are observed on hBN substrate and their dependence 
      on gate sweep rate, sweep range, and gate stress is also studied. This precise 
      comparison between encapsulated devices on SiO(2) and hBN substrates further 
      demonstrate the requirement of hBN substrate and encapsulation for improved and 
      stable performance of MoS(2) FETs.
FAU - Lee, Changhee
AU  - Lee C
AD  - School of Electronic and Electrical Engineering and Sungkyunkwan Advanced 
      Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, 
      Republic of Korea.
FAU - Rathi, Servin
AU  - Rathi S
FAU - Khan, Muhammad Atif
AU  - Khan MA
FAU - Lim, Dongsuk
AU  - Lim D
FAU - Kim, Yunseob
AU  - Kim Y
FAU - Yun, Sun Jin
AU  - Yun SJ
FAU - Youn, Doo-Hyeb
AU  - Youn DH
FAU - Watanabe, Kenji
AU  - Watanabe K
FAU - Taniguchi, Takashi
AU  - Taniguchi T
FAU - Kim, Gil-Ho
AU  - Kim GH
LA  - eng
PT  - Journal Article
DEP - 20180522
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2018/05/23 06:00
MHDA- 2018/05/23 06:01
CRDT- 2018/05/23 06:00
PHST- 2018/05/23 06:00 [pubmed]
PHST- 2018/05/23 06:01 [medline]
PHST- 2018/05/23 06:00 [entrez]
AID - 10.1088/1361-6528/aac6b0 [doi]
PST - ppublish
SO  - Nanotechnology. 2018 Aug 17;29(33):335202. doi: 10.1088/1361-6528/aac6b0. Epub 
      2018 May 22.