PMID- 29844607
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 8
IP  - 1
DP  - 2018 May 29
TI  - High-field modulated ion-selective field-effect-transistor (FET) sensors with 
      sensitivity higher than the ideal Nernst sensitivity.
PG  - 8300
LID - 10.1038/s41598-018-26792-9 [doi]
LID - 8300
AB  - Lead ion selective membrane (Pb-ISM) coated AlGaN/GaN high electron mobility 
      transistors (HEMT) was used to demonstrate a whole new methodology for 
      ion-selective FET sensors, which can create ultra-high sensitivity (-36 mV/log 
      [Pb(2+)]) surpassing the limit of ideal sensitivity (-29.58 mV/log [Pb(2+)]) in a 
      typical Nernst equation for lead ion. The largely improved sensitivity has 
      tremendously reduced the detection limit (10(-10) M) for several orders of 
      magnitude of lead ion concentration compared to typical ion-selective electrode 
      (ISE) (10(-7) M). The high sensitivity was obtained by creating a strong filed 
      between the gate electrode and the HEMT channel. Systematical investigation was 
      done by measuring different design of the sensor and gate bias, indicating 
      ultra-high sensitivity and ultra-low detection limit obtained only in 
      sufficiently strong field. Theoretical study in the sensitivity consistently 
      agrees with the experimental finding and predicts the maximum and minimum 
      sensitivity. The detection limit of our sensor is comparable to that of 
      Inductively-Coupled-Plasma Mass Spectrum (ICP-MS), which also has detection limit 
      near 10(-10) M.
FAU - Chen, Yi-Ting
AU  - Chen YT
AD  - Institute of Nanoengineering and Microsystems, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China.
FAU - Sarangadharan, Indu
AU  - Sarangadharan I
AD  - Institute of Nanoengineering and Microsystems, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China.
FAU - Sukesan, Revathi
AU  - Sukesan R
AD  - Institute of Nanoengineering and Microsystems, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China.
FAU - Hseih, Ching-Yen
AU  - Hseih CY
AD  - Department of Power Mechanical Engineering, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China.
FAU - Lee, Geng-Yen
AU  - Lee GY
AD  - Department of Electrical engineering, National Central University, Jhongli City, 
      Taoyuan County, 320, Taiwan, Republic of China.
FAU - Chyi, Jen-Inn
AU  - Chyi JI
AUID- ORCID: 0000-0001-8149-832X
AD  - Department of Electrical engineering, National Central University, Jhongli City, 
      Taoyuan County, 320, Taiwan, Republic of China.
FAU - Wang, Yu-Lin
AU  - Wang YL
AD  - Institute of Nanoengineering and Microsystems, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China. ylwang@mx.nthu.edu.tw.
AD  - Department of Power Mechanical Engineering, National Tsing Hua University, 
      Hsinchu, 300, Taiwan, Republic of China. ylwang@mx.nthu.edu.tw.
LA  - eng
PT  - Journal Article
DEP - 20180529
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC5974191
COIS- The authors declare no competing interests.
EDAT- 2018/05/31 06:00
MHDA- 2018/05/31 06:01
PMCR- 2018/05/29
CRDT- 2018/05/31 06:00
PHST- 2018/03/29 00:00 [received]
PHST- 2018/05/11 00:00 [accepted]
PHST- 2018/05/31 06:00 [entrez]
PHST- 2018/05/31 06:00 [pubmed]
PHST- 2018/05/31 06:01 [medline]
PHST- 2018/05/29 00:00 [pmc-release]
AID - 10.1038/s41598-018-26792-9 [pii]
AID - 26792 [pii]
AID - 10.1038/s41598-018-26792-9 [doi]
PST - epublish
SO  - Sci Rep. 2018 May 29;8(1):8300. doi: 10.1038/s41598-018-26792-9.