PMID- 29877077
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180731
LR  - 20180731
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 26
DP  - 2018 Jul 5
TI  - Sub-5 nm Monolayer Arsenene and Antimonene Transistors.
PG  - 22363-22371
LID - 10.1021/acsami.8b03840 [doi]
AB  - Novel two-dimensional (2D) semiconductors arsenene and antimonene are promising 
      channel materials for next-generation field effect transistors (FETs) because of 
      the high carrier mobility and stability under ambient conditions. Stimulated by 
      the recent experimental development of sub-5 nm 2D MoS(2) FETs, we investigate 
      the device performance of monolayer (ML) arsenene and antimonene in the sub-5 nm 
      region by using accurate ab initio quantum transport simulation. We reveal that 
      the optimized sub-5 nm double-gate (DG) ML arsenene and antimonene 
      metal-oxide-semiconductor FETs (MOSFETs) can fulfill the low power requirements 
      of the International Technology Roadmap for Semiconductors in 2028 until the gate 
      length is scaled down to 4 nm. When the gate length is scaled down to 1 nm, the 
      performances of the DG ML arsenene and antimonene MOSFETs are superior to that of 
      the DG ML MoS(2) MOSFETs in terms of the on-current. Therefore, 2D arsenene and 
      antimonene are probably more suitable for ultrascaled FETs than 2D MoS(2) in the 
      post-silicon era.
FAU - Sun, Xiaotian
AU  - Sun X
AUID- ORCID: 0000-0002-2769-6242
AD  - College of Chemistry and Chemical Engineering, and Henan Key Laboratory of 
      Function-Oriented Porous Materials , Luoyang Normal University , Luoyang 471934 , 
      P. R. China.
FAU - Song, Zhigang
AU  - Song Z
AUID- ORCID: 0000-0002-8355-6498
AD  - State Key Laboratory for Mesoscopic Physics and Department of Physics , Peking 
      University , Beijing 100871 , P. R. China.
FAU - Liu, Shiqi
AU  - Liu S
AUID- ORCID: 0000-0002-9166-8254
AD  - State Key Laboratory for Mesoscopic Physics and Department of Physics , Peking 
      University , Beijing 100871 , P. R. China.
FAU - Wang, Yangyang
AU  - Wang Y
AUID- ORCID: 0000-0003-3992-3796
AD  - Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of 
      Space Technology , China Academy of Space Technology , Beijing 100094 , P. R. 
      China.
FAU - Li, Youyong
AU  - Li Y
AUID- ORCID: 0000-0002-5248-2756
AD  - Functional Nano & Soft Materials Laboratory (FUNSOM) and Collaborative Innovation 
      Center of Suzhou Nano Science and Technology Jiangsu Key Laboratory for 
      Carbon-Based Functional Materials & Devices , Soochow University , Suzhou , 
      Jiangsu 215123 , P. R. China.
FAU - Wang, Weizhou
AU  - Wang W
AUID- ORCID: 0000-0002-4309-9077
AD  - College of Chemistry and Chemical Engineering, and Henan Key Laboratory of 
      Function-Oriented Porous Materials , Luoyang Normal University , Luoyang 471934 , 
      P. R. China.
FAU - Lu, Jing
AU  - Lu J
AD  - State Key Laboratory for Mesoscopic Physics and Department of Physics , Peking 
      University , Beijing 100871 , P. R. China.
AD  - Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P. R. China.
LA  - eng
PT  - Journal Article
DEP - 20180619
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - density functional theory
OT  - monolayer arsenene and antimonene
OT  - performance limit
OT  - quantum transport simulations
OT  - sub-5 nm transistor
EDAT- 2018/06/08 06:00
MHDA- 2018/06/08 06:01
CRDT- 2018/06/08 06:00
PHST- 2018/06/08 06:00 [pubmed]
PHST- 2018/06/08 06:01 [medline]
PHST- 2018/06/08 06:00 [entrez]
AID - 10.1021/acsami.8b03840 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Jul 5;10(26):22363-22371. doi: 
      10.1021/acsami.8b03840. Epub 2018 Jun 19.