PMID- 29890689
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 1996-1944 (Print)
IS  - 1996-1944 (Electronic)
IS  - 1996-1944 (Linking)
VI  - 11
IP  - 6
DP  - 2018 Jun 8
TI  - The Effect of Buffer Types on the In(0.82)Ga(0.18)As Epitaxial Layer Grown on an 
      InP (100) Substrate.
LID - 10.3390/ma11060975 [doi]
LID - 975
AB  - In(0.82)Ga(0.18)As epitaxial layers were grown on InP (100) substrates at 530 
      °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) 
      technique. The effects of different buffer structures, such as a single buffer 
      layer, compositionally graded buffer layers, and superlattice buffer layers, on 
      the crystalline quality and property were investigated. Double-crystal X-ray 
      diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall 
      measurements were used to evaluate the crystalline quality and electrical 
      property. Scanning electron microscope (SEM), atomic force microscope (AFM), and 
      transmission electron microscope (TEM) were used to characterize the surface 
      morphology and microstructure, respectively. Compared with the In(0.82)Ga(0.18)As 
      epitaxial layer directly grown on an InP substrate, the quality of the sample is 
      not obviously improved by using a single In(0.82)Ga(0.18)As buffer layer. By 
      introducing the graded In(x)Ga(1−x)As buffer layers, it was found that the 
      dislocation density in the epitaxial layer significantly decreased and the 
      surface quality improved remarkably. In addition, the number of dislocations in 
      the epitaxial layer greatly decreased under the combined action of 
      multi-potential wells and potential barriers by the introduction of a 
      In(0.82)Ga(0.18)As/In(0.82)Al(0.18)As superlattice buffer. However, the surface 
      subsequently roughened, which may be explained by surface undulation.
FAU - Zhang, Min
AU  - Zhang M
AD  - Key Laboratory of Automobile Materials (Ministry of Education), Jilin University, 
      Changchun 130025, China. zhangmin16@mails.jlu.edu.cn.
AD  - College of Materials Science and Engineering, Jilin University, Nanling Campus, 
      Changchun 130025, China. zhangmin16@mails.jlu.edu.cn.
FAU - Guo, Zuoxing
AU  - Guo Z
AD  - Key Laboratory of Automobile Materials (Ministry of Education), Jilin University, 
      Changchun 130025, China. guozx@jlu.edu.cn.
AD  - College of Materials Science and Engineering, Jilin University, Nanling Campus, 
      Changchun 130025, China. guozx@jlu.edu.cn.
FAU - Zhao, Liang
AU  - Zhao L
AD  - College of Materials Science and Engineering, Jilin University, Nanling Campus, 
      Changchun 130025, China. zhaoliang14@mails.jlu.edu.cn.
FAU - Yang, Shen
AU  - Yang S
AD  - College of Materials Science and Engineering, Jilin University, Nanling Campus, 
      Changchun 130025, China. yangshen16@mails.jlu.edu.cn.
FAU - Zhao, Lei
AU  - Zhao L
AD  - Key Laboratory of Automobile Materials (Ministry of Education), Jilin University, 
      Changchun 130025, China. zljolly@jlu.edu.cn.
LA  - eng
PT  - Journal Article
DEP - 20180608
PL  - Switzerland
TA  - Materials (Basel)
JT  - Materials (Basel, Switzerland)
JID - 101555929
PMC - PMC6025214
OTO - NOTNLM
OT  - In0.82Ga0.18As/InP
OT  - graded buffer
OT  - single buffer layer
OT  - superlattice buffer
COIS- The authors declare no conflict of interest.
EDAT- 2018/06/13 06:00
MHDA- 2018/06/13 06:01
PMCR- 2018/06/08
CRDT- 2018/06/13 06:00
PHST- 2018/05/16 00:00 [received]
PHST- 2018/06/04 00:00 [revised]
PHST- 2018/06/06 00:00 [accepted]
PHST- 2018/06/13 06:00 [entrez]
PHST- 2018/06/13 06:00 [pubmed]
PHST- 2018/06/13 06:01 [medline]
PHST- 2018/06/08 00:00 [pmc-release]
AID - ma11060975 [pii]
AID - materials-11-00975 [pii]
AID - 10.3390/ma11060975 [doi]
PST - epublish
SO  - Materials (Basel). 2018 Jun 8;11(6):975. doi: 10.3390/ma11060975.