PMID- 29896590
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180806
LR  - 20180806
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 10
IP  - 24
DP  - 2018 Jun 21
TI  - Enhanced stability and performance of few-layer black phosphorus transistors by 
      electron beam irradiation.
PG  - 11616-11623
LID - 10.1039/c8nr01678j [doi]
AB  - Few layer black phosphorus (BP) has recently emerged as a potential graphene 
      analogue due to its high mobility and direct, appreciable, band gap. The 
      fabrication and characterization of field effect transistors (FETs) involves 
      exposure of the channel material to an electron beam (e-beam) in imaging 
      techniques such as transmission electron microscopy (TEM) and scanning electron 
      microscopy (SEM), and fabrication techniques like electron beam lithography 
      (EBL). Despite this, the effect of e-beam irradiation on BP-FET performance has 
      not been studied experimentally. In this work, we report the first experimental 
      study on the impact of e-beam irradiation on BP-FETs. An electron beam is known 
      to induce defects and structural changes in 2D materials like graphene, MoS2etc. 
      resulting in the deterioration of the device quality. However, for BP-FETs, we 
      observe an improvement in the on-current and carrier mobility (mu) along with a 
      decrease in threshold voltage (Vth) on exposure to an e-beam with 15 keV energy 
      for 80 seconds. These changes can be attributed to the capture of electrons by 
      traps near the SiO2-BP interface and reduced BP surface roughness due to e-beam 
      exposure. Hysteresis measurements and physical characterization (i.e. atomic 
      force microscopy (AFM), X-ray photoelectron (XPS) and Raman spectroscopies) 
      validate these mechanisms. Reduced hysteresis indicates occupation of the traps, 
      AFM surface scans indicate reduced surface roughness and XPS data show a reduced 
      phosphorus oxide (POx) peak immediately after exposure. Raman measurements 
      indicate a probable structural change due to the interaction between e-beam and 
      BP which could result in better stability.
FAU - Goyal, Natasha
AU  - Goyal N
AD  - 606, Nanoelectronics Building, 6th Floor Department of Electrical Engineering IIT 
      Bombay, Powai, Mumbai 400076, India. slodha@ee.iitb.ac.in.
FAU - Kaushik, Naveen
AU  - Kaushik N
FAU - Jawa, Himani
AU  - Jawa H
FAU - Lodha, Saurabh
AU  - Lodha S
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2018/06/14 06:00
MHDA- 2018/06/14 06:01
CRDT- 2018/06/14 06:00
PHST- 2018/06/14 06:00 [pubmed]
PHST- 2018/06/14 06:01 [medline]
PHST- 2018/06/14 06:00 [entrez]
AID - 10.1039/c8nr01678j [doi]
PST - ppublish
SO  - Nanoscale. 2018 Jun 21;10(24):11616-11623. doi: 10.1039/c8nr01678j.