PMID- 30005194
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1096-0856 (Electronic)
IS  - 1090-7807 (Linking)
VI  - 294
DP  - 2018 Sep
TI  - A single chip electron spin resonance detector based on a single high electron 
      mobility transistor.
PG  - 59-70
LID - S1090-7807(18)30173-3 [pii]
LID - 10.1016/j.jmr.2018.07.002 [doi]
AB  - Single-chip microwave oscillators are promising devices for inductive electron 
      spin resonance spectroscopy (ESR) experiments on nanoliter and subnanoliter 
      samples. Two major problems of the previously reported designs were the large 
      minimum microwave magnetic field (0.1-0.7 mT) and large power consumption 
      (0.5-200 mW), severely limiting their use for the investigation of samples having 
      long relaxation times and for operation at low temperatures. Here we report on 
      the design and characterization of a single-chip ESR detector operating with a 
      microwave magnetic field and a power consumption orders of magnitude lower 
      compared with previous designs. These significant improvements are mainly due to 
      the use of a high electron mobility transistor (HEMT) technology instead of a 
      complementary metal-oxide semiconductor (CMOS) technology. The realized 
      single-chip ESR detector, which operates at 11.2 GHz, consists of an LC Colpitts 
      oscillator realized with a single high-electron mobility transistor and a 
      co-integrated single turn planar coil having a diameter of 440 mum. The realized 
      detector operates from 300 K down to 1.4 K, at least. Its minimum microwave 
      magnetic field is 0.4 muT at 300 K and 0.06 muT at 1.4 K, whereas its power 
      consumption is 90 muW at 300 K and 4 muW at 1.4 K, respectively. The experimental 
      spin sensitivity on a sensitive volume of about 30 nL, as measured with a single 
      crystal of alpha,gamma-bisdiphenylene-beta-phenylallyl (BDPA)/benzene complex, is of 
      8 x 10(10) spins/Hz(1/2) at 300 K and 2 x 10(9) spins/Hz(1/2) at 10 K, 
      respectively. In a volume of about 100 pL, located in proximity to the coil wire, 
      the spin sensitivity improves by two orders of magnitude.
CI  - Copyright (c) 2018 Elsevier Inc. All rights reserved.
FAU - Matheoud, Alessandro V
AU  - Matheoud AV
AD  - Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne CH-1015, Switzerland.
FAU - Sahin, Nergiz
AU  - Sahin N
AD  - Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne CH-1015, Switzerland.
FAU - Boero, Giovanni
AU  - Boero G
AD  - Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne CH-1015, Switzerland. 
      Electronic address: giovanni.boero@epfl.ch.
LA  - eng
PT  - Journal Article
DEP - 20180705
PL  - United States
TA  - J Magn Reson
JT  - Journal of magnetic resonance (San Diego, Calif. : 1997)
JID - 9707935
OTO - NOTNLM
OT  - EPR
OT  - ESR
OT  - Electron paramagnetic resonance
OT  - Electron spin resonance
OT  - HEMT
OT  - Single chip detector
EDAT- 2018/07/14 06:00
MHDA- 2018/07/14 06:01
CRDT- 2018/07/14 06:00
PHST- 2018/05/30 00:00 [received]
PHST- 2018/07/03 00:00 [revised]
PHST- 2018/07/04 00:00 [accepted]
PHST- 2018/07/14 06:00 [pubmed]
PHST- 2018/07/14 06:01 [medline]
PHST- 2018/07/14 06:00 [entrez]
AID - S1090-7807(18)30173-3 [pii]
AID - 10.1016/j.jmr.2018.07.002 [doi]
PST - ppublish
SO  - J Magn Reson. 2018 Sep;294:59-70. doi: 10.1016/j.jmr.2018.07.002. Epub 2018 Jul 
      5.