PMID- 30062340
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180820
LR  - 20180820
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 10
IP  - 32
DP  - 2018 Aug 16
TI  - Metal-agglomeration-suppressed growth of MoS(2) and MoSe(2) films with small 
      sulfur and selenium molecules for high mobility field effect transistor 
      applications.
PG  - 15213-15221
LID - 10.1039/c8nr03778g [doi]
AB  - This work reports a breakthrough technique for achieving high quality and uniform 
      molybdenum dichalcogenide (MoX2 where X = S, Se) films on large-area wafers via 
      metal-agglomeration-suppressed growth (MASG) with small chalcogen (X-) molecules 
      at growth temperatures (TG) of 600  degrees C or lower. In order to grow MoS2 films 
      suitable for field effect transistors (FETs), S-molecules should be pre-deposited 
      on Mo films at 60  degrees C prior to heating the substrate up to TG. The pre-deposited 
      S-molecules successfully suppressed the agglomeration of Mo during sulfurization 
      and prevented the formation of protruding islands in the resultant sulfide films. 
      The small X-molecules supplied from a thermal cracker reacted with Mo-precursor 
      film to form MoX2. The film quality strongly depends on the temperatures of 
      cracking and reservoir zones, as well as TG. The MoS2 film grown at 570  degrees C showed 
      a thickness variation of less than 3.3% on a 6 inch-wafer. The mobility and 
      on/off current ratio of 6.1 nm-MoS2 FET at TG = 570  degrees C were 59.8 cm2 V-1 s-1 and 
      105, respectively. The most significant advantages of the MASG method proposed in 
      this work are its expandability to various metal dichalcogenides on larger 
      substrates as well as a lower TG enabled by using reactive small molecules 
      supplied from a cracker, for which temperature is independently controlled.
FAU - Jung, Kwang Hoon
AU  - Jung KH
AD  - ICT Materials Research Group, Electronics and Telecommunications Research 
      Institute, Daejeon 34129, Republic of Korea. sjyun@etri.re.kr.
FAU - Yun, Sun Jin
AU  - Yun SJ
FAU - Choi, Yongsuk
AU  - Choi Y
FAU - Cho, Jeong Ho
AU  - Cho JH
FAU - Lim, Jung Wook
AU  - Lim JW
FAU - Chai, Hyun-Jun
AU  - Chai HJ
FAU - Cho, Dae-Hyung
AU  - Cho DH
FAU - Chung, Yong-Duck
AU  - Chung YD
FAU - Kim, Gayoung
AU  - Kim G
LA  - eng
PT  - Journal Article
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2018/08/01 06:00
MHDA- 2018/08/01 06:01
CRDT- 2018/08/01 06:00
PHST- 2018/08/01 06:00 [pubmed]
PHST- 2018/08/01 06:01 [medline]
PHST- 2018/08/01 06:00 [entrez]
AID - 10.1039/c8nr03778g [doi]
PST - ppublish
SO  - Nanoscale. 2018 Aug 16;10(32):15213-15221. doi: 10.1039/c8nr03778g.