PMID- 30129359
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20180928
LR  - 20181001
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 38
DP  - 2018 Sep 26
TI  - Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating 
      an Effective Hole Mobility Exceeding 5 cm(2) V(-1) s(-1) with Solid-State 
      Electrolyte Dielectric.
PG  - 32492-32500
LID - 10.1021/acsami.8b14176 [doi]
AB  - We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- 
      b']dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4 
      H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole 
      (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- 
      b:4,5- b']dithiophen-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (DFD) moieties 
      and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest 
      occupied molecular orbital and lowest unoccupied molecular orbital levels of 
      -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline 
      states in films with exclusive edge-on orientations. PDFDSe thin film was 
      incorporated as a channel material in top-gate bottom-contact organic thin-film 
      transistor with a solid-state electrolyte gate insulator (SEGI) composed of 
      poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride- 
      co-hexafluroropropylene)/1-ethyl-3-methylimidazolium 
      bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole 
      mobility up to mu = 20.3 cm(2) V(-1) s(-1) corresponding to effective hole 
      mobility exceeding 5 cm(2) V(-1) s(-1) and a very low threshold voltage of -1 V. 
      These device characteristics are associated with the high carrier density in the 
      semiconducting channel region, induced by the high capacitance of the SEGI layer. 
      The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great 
      potential of semiconducting polymer thin-film transistors as electronic 
      components in future electronic applications.
FAU - Nketia-Yawson, Benjamin
AU  - Nketia-Yawson B
AD  - Department of Energy and Materials Engineering , Dongguk University , 30 
      Pildong-ro, 1-gil , Jung-gu, Seoul 04620 , Republic of Korea.
FAU - Jung, A-Ra
AU  - Jung AR
AD  - Department of Science Education , Ewha Womans University , 52 Ewhayeodae-gil , 
      Seodaemun-gu, Seoul 03760 , Republic of Korea.
FAU - Nguyen, Hieu Dinh
AU  - Nguyen HD
AD  - Department of Chemistry , Kunsan National University , 558 Daehak-ro , Kunsan-si 
      54150 , Republic of Korea.
FAU - Lee, Kyung-Koo
AU  - Lee KK
AD  - Department of Chemistry , Kunsan National University , 558 Daehak-ro , Kunsan-si 
      54150 , Republic of Korea.
FAU - Kim, BongSoo
AU  - Kim B
AUID- ORCID: 0000-0002-4982-6343
AD  - Department of Science Education , Ewha Womans University , 52 Ewhayeodae-gil , 
      Seodaemun-gu, Seoul 03760 , Republic of Korea.
AD  - Department of Chemistry , Ulsan National Institute of Science and Technology 
      (UNIST) , 50 UNIST-gil , Ulsan 44919 , Republic of Korea.
FAU - Noh, Yong-Young
AU  - Noh YY
AUID- ORCID: 0000-0001-7222-2401
AD  - Department of Energy and Materials Engineering , Dongguk University , 30 
      Pildong-ro, 1-gil , Jung-gu, Seoul 04620 , Republic of Korea.
LA  - eng
PT  - Journal Article
DEP - 20180913
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - carrier mobility
OT  - chain orientation
OT  - donor-acceptor conjugated polymers
OT  - organic thin-film transistors
OT  - solid-state electrolyte
EDAT- 2018/08/22 06:00
MHDA- 2018/08/22 06:01
CRDT- 2018/08/22 06:00
PHST- 2018/08/22 06:00 [pubmed]
PHST- 2018/08/22 06:01 [medline]
PHST- 2018/08/22 06:00 [entrez]
AID - 10.1021/acsami.8b14176 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32492-32500. doi: 
      10.1021/acsami.8b14176. Epub 2018 Sep 13.