PMID- 30129359 OWN - NLM STAT- PubMed-not-MEDLINE DCOM- 20180928 LR - 20181001 IS - 1944-8252 (Electronic) IS - 1944-8244 (Linking) VI - 10 IP - 38 DP - 2018 Sep 26 TI - Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating an Effective Hole Mobility Exceeding 5 cm(2) V(-1) s(-1) with Solid-State Electrolyte Dielectric. PG - 32492-32500 LID - 10.1021/acsami.8b14176 [doi] AB - We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophen-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride- co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to mu = 20.3 cm(2) V(-1) s(-1) corresponding to effective hole mobility exceeding 5 cm(2) V(-1) s(-1) and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications. FAU - Nketia-Yawson, Benjamin AU - Nketia-Yawson B AD - Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil , Jung-gu, Seoul 04620 , Republic of Korea. FAU - Jung, A-Ra AU - Jung AR AD - Department of Science Education , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea. FAU - Nguyen, Hieu Dinh AU - Nguyen HD AD - Department of Chemistry , Kunsan National University , 558 Daehak-ro , Kunsan-si 54150 , Republic of Korea. FAU - Lee, Kyung-Koo AU - Lee KK AD - Department of Chemistry , Kunsan National University , 558 Daehak-ro , Kunsan-si 54150 , Republic of Korea. FAU - Kim, BongSoo AU - Kim B AUID- ORCID: 0000-0002-4982-6343 AD - Department of Science Education , Ewha Womans University , 52 Ewhayeodae-gil , Seodaemun-gu, Seoul 03760 , Republic of Korea. AD - Department of Chemistry , Ulsan National Institute of Science and Technology (UNIST) , 50 UNIST-gil , Ulsan 44919 , Republic of Korea. FAU - Noh, Yong-Young AU - Noh YY AUID- ORCID: 0000-0001-7222-2401 AD - Department of Energy and Materials Engineering , Dongguk University , 30 Pildong-ro, 1-gil , Jung-gu, Seoul 04620 , Republic of Korea. LA - eng PT - Journal Article DEP - 20180913 PL - United States TA - ACS Appl Mater Interfaces JT - ACS applied materials & interfaces JID - 101504991 OTO - NOTNLM OT - carrier mobility OT - chain orientation OT - donor-acceptor conjugated polymers OT - organic thin-film transistors OT - solid-state electrolyte EDAT- 2018/08/22 06:00 MHDA- 2018/08/22 06:01 CRDT- 2018/08/22 06:00 PHST- 2018/08/22 06:00 [pubmed] PHST- 2018/08/22 06:01 [medline] PHST- 2018/08/22 06:00 [entrez] AID - 10.1021/acsami.8b14176 [doi] PST - ppublish SO - ACS Appl Mater Interfaces. 2018 Sep 26;10(38):32492-32500. doi: 10.1021/acsami.8b14176. Epub 2018 Sep 13.