PMID- 30132773
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20181016
LR  - 20181016
IS  - 2040-3372 (Electronic)
IS  - 2040-3364 (Linking)
VI  - 10
IP  - 39
DP  - 2018 Oct 21
TI  - Improving the electrical properties of InAs nanowire field effect transistors by 
      covering them with Y(2)O(3)/HfO(2) layers.
PG  - 18492-18501
LID - 10.1039/c8nr05680c [doi]
AB  - Quasi-one-dimensional semiconducting materials have attracted increasing 
      attention due to their excellent ability to downscale the size of transistors. 
      However, in quasi-one-dimensional nanowire (NW) transistors, their surface and 
      interface properties play a very important role mainly due to the large 
      surface-to-volume ratio of NWs and surface scattering, which degrade their 
      carrier mobility. Herein, we developed a new method to cover the channel surface 
      of InAs NW field effect transistors (FETs) with Y(2)O(3)/HfO(2) layers to improve 
      their electrical properties. We successfully fabricated nine FETs and measured 
      their electrical properties, which improve after depositing the Y(2)O(3)/HfO(2) 
      layers, including an increase in on-state current, decrease in off-state current, 
      increase in transconductance, increase in electron mobility and decrease in 
      subthreshold swing. By comparing the properties of Y(2)O(3)/HfO(2)-covered 
      devices with that of the FETs fabricated without the Y(2)O(3) covering or without 
      annealing, we prove that it is the combined Y(2)O(3)/HfO(2) layers instead of 
      only the Y(2)O(3) or HfO(2) layer that improve the electrical properties of the 
      FETs. The Cs-corrected high-resolution scanning transmission electron microscopy 
      study demonstrates that Y can actually diffuse through the native oxide layer 
      (confirmed to be InO(x)) and reach the surface of the InAs NWs. Our results 
      indicate that the desirable characteristics of Y(2)O(3) and the surface 
      passivation by HfO(2) improve the electrical properties of the InAs NW FETs, in 
      which Y(2)O(3) plays an important role to modify and stabilize the interface 
      between the InAs NWs and the outside dielectric layer. Furthermore, this method 
      should also be applicable to other III-V materials.
FAU - Li, Tong
AU  - Li T
AD  - Key Laboratory for the Physics and Chemistry of Nanodevices, Department of 
      Electronics, Peking University, Beijing 100871, China. qingchen@pku.edu.cn.
FAU - Shen, Rui
AU  - Shen R
FAU - Sun, Mei
AU  - Sun M
FAU - Pan, Dong
AU  - Pan D
FAU - Zhang, Jingmin
AU  - Zhang J
FAU - Xu, Jun
AU  - Xu J
FAU - Zhao, Jianhua
AU  - Zhao J
FAU - Chen, Qing
AU  - Chen Q
LA  - eng
PT  - Journal Article
DEP - 20180822
PL  - England
TA  - Nanoscale
JT  - Nanoscale
JID - 101525249
EDAT- 2018/08/23 06:00
MHDA- 2018/08/23 06:01
CRDT- 2018/08/23 06:00
PHST- 2018/08/23 06:00 [pubmed]
PHST- 2018/08/23 06:01 [medline]
PHST- 2018/08/23 06:00 [entrez]
AID - 10.1039/c8nr05680c [doi]
PST - ppublish
SO  - Nanoscale. 2018 Oct 21;10(39):18492-18501. doi: 10.1039/c8nr05680c. Epub 2018 Aug 
      22.