PMID- 30188325
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20181002
LR  - 20181004
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 29
IP  - 47
DP  - 2018 Nov 23
TI  - Two-dimensional plumbum-doped tin diselenide monolayer transistor with high 
      on/off ratio.
PG  - 474002
LID - 10.1088/1361-6528/aadf5a [doi]
AB  - Doping can effectively regulate the electrical and optical properties of 
      two-dimensional semiconductors. Here, we present high-quality Pb-doped SnSe(2) 
      monolayer exfoliated using a micromechanical cleavage method. X-ray photoelectron 
      spectroscopy measurement demonstrates that Pb content of the doped sample is 
       approximately 3.6% and doping induces the downward shift of the Fermi level with respect to 
      the pure SnSe(2). Transmission electron microscopy characterization exhibits that 
      Pb(0.036)Sn(0.964)Se(2) nanosheets have a high-quality hexagonal symmetry 
      structure and Pb element is uniformly distributed in the nanosheets. The current 
      of the SnSe(2) field effect transistors (FETs) was found to be very difficult to 
      turn off due to the high electron density. The FETs based on the 
      Pb(0.036)Sn(0.964)Se(2) monolayer show n-type behavior with a high on/off ratio 
      of 10(6) which is higher than any values of SnSe(2) FETs reported at the moment. 
      The estimated carrier concentration of Pb(0.036)Sn(0.964)Se(2) is approximately 
      six times lower than that of SnSe(2). The results suggest that the method of 
      reducing carrier concentration by doping to achieve high on/off ratio is 
      effective, and Pb-doped SnSe(2) monolayer has significant potential in future 
      nanoelectronic and optoelectronic applications.
FAU - Liu, Junchi
AU  - Liu J
AD  - Department of Applied Physics, School of Physics and Electronics, Hunan 
      University, Changsha 410082, People's Republic of China.
FAU - Zhong, Mianzeng
AU  - Zhong M
FAU - Liu, Xiao
AU  - Liu X
FAU - Sun, Guangzhuang
AU  - Sun G
FAU - Chen, Peng
AU  - Chen P
FAU - Zhang, Zhengwei
AU  - Zhang Z
FAU - Li, Jia
AU  - Li J
FAU - Ma, Huifang
AU  - Ma H
FAU - Zhao, Bei
AU  - Zhao B
FAU - Wu, Ruixia
AU  - Wu R
FAU - Dang, Weiqi
AU  - Dang W
FAU - Yang, Xiangdong
AU  - Yang X
FAU - Dai, Chen
AU  - Dai C
FAU - Tang, Xuwan
AU  - Tang X
FAU - Fan, Chao
AU  - Fan C
FAU - Chen, Zhuojun
AU  - Chen Z
FAU - Miao, Lili
AU  - Miao L
FAU - Liu, Xingqiang
AU  - Liu X
FAU - Liu, Yuan
AU  - Liu Y
FAU - Li, Bo
AU  - Li B
FAU - Duan, Xidong
AU  - Duan X
LA  - eng
PT  - Journal Article
DEP - 20180906
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2018/09/07 06:00
MHDA- 2018/09/07 06:01
CRDT- 2018/09/07 06:00
PHST- 2018/09/07 06:00 [pubmed]
PHST- 2018/09/07 06:01 [medline]
PHST- 2018/09/07 06:00 [entrez]
AID - 10.1088/1361-6528/aadf5a [doi]
PST - ppublish
SO  - Nanotechnology. 2018 Nov 23;29(47):474002. doi: 10.1088/1361-6528/aadf5a. Epub 
      2018 Sep 6.