PMID- 30424329
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 9
IP  - 8
DP  - 2018 Aug 10
TI  - An Improved Large Signal Model for 0.1 mum AlGaN/GaN High Electron Mobility 
      Transistors (HEMTs) Process and Its Applications in Practical Monolithic 
      Microwave Integrated Circuit (MMIC) Design in W band.
LID - 10.3390/mi9080396 [doi]
LID - 396
AB  - An improved empirical large signal model for 0.1 microm AlGaN/GaN high electron 
      mobility transistor (HEMT) process is proposed in this paper. The short channel 
      effect including the drain induced barrier lowering (DIBL) effect and channel 
      length modulation has been considered for the accurate description of DC 
      characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 mum and 
      different dimensions have been employed to validate the accuracy of the large 
      signal model. Good agreement has been achieved between the simulated and measured 
      S parameters, I-V characteristics and large signal performance at 28 GHz. 
      Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier 
      from 92 GHz to 96 GHz has been designed for validation of the proposed model. 
      Results show that the improved large signal model can be used up to W band.
FAU - Li, Junfeng
AU  - Li J
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. lijunfeng_EE@163.com.
FAU - Mao, Shuman
AU  - Mao S
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. maoshuman@163.com.
FAU - Xu, Yuehang
AU  - Xu Y
AUID- ORCID: 0000-0003-1706-2681
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. yuehangxu@uestc.edu.cn.
FAU - Zhao, Xiaodong
AU  - Zhao X
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. zhaoxiaodong@std.uestc.edu.cn.
FAU - Wang, Weibo
AU  - Wang W
AD  - Nanjing Electronic Devices Institute, Nanjing 210016, China. bobommic@163.com.
FAU - Guo, Fangjing
AU  - Guo F
AD  - Nanjing Electronic Devices Institute, Nanjing 210016, China. fjiguo@163.com.
FAU - Zhang, Qingfeng
AU  - Zhang Q
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. a2277462594@163.com.
FAU - Wu, Yunqiu
AU  - Wu Y
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. yqwu@uestc.edu.cn.
FAU - Zhang, Bing
AU  - Zhang B
AD  - Nanjing Electronic Devices Institute, Nanjing 210016, China. 
      binzhang_cetc55@aliyun.com.
FAU - Chen, Tangsheng
AU  - Chen T
AD  - Nanjing Electronic Devices Institute, Nanjing 210016, China. 
      chentsh@vip.sina.com.
FAU - Yan, Bo
AU  - Yan B
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. yanbo@ee.uestc.edu.cn.
FAU - Xu, Ruimin
AU  - Xu R
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. rmxu@uestc.edu.cn.
FAU - Li, Yanrong
AU  - Li Y
AD  - School of Electronic Science and Engineering (National Exemplary School of 
      Microelectronics), University of Electronic Science and Technology of China, 
      Chengdu 611731, China. yrli@uestc.edu.cn.
LA  - eng
GR  - 61474020/National Natural Science Foundation of China/
GR  - ZYGX2016J036/Fundamental Research Funds for the Central Universities/
PT  - Journal Article
DEP - 20180810
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC6187807
OTO - NOTNLM
OT  - AlGaN/GaN HEMT
OT  - DIBL effect
OT  - W band
OT  - channel length modulation
OT  - power amplifier
COIS- The authors declare that there is no conflict of interests regarding the 
      publication of this article.
EDAT- 2018/11/15 06:00
MHDA- 2018/11/15 06:01
PMCR- 2018/08/10
CRDT- 2018/11/15 06:00
PHST- 2018/06/28 00:00 [received]
PHST- 2018/08/04 00:00 [revised]
PHST- 2018/08/08 00:00 [accepted]
PHST- 2018/11/15 06:00 [entrez]
PHST- 2018/11/15 06:00 [pubmed]
PHST- 2018/11/15 06:01 [medline]
PHST- 2018/08/10 00:00 [pmc-release]
AID - mi9080396 [pii]
AID - micromachines-09-00396 [pii]
AID - 10.3390/mi9080396 [doi]
PST - epublish
SO  - Micromachines (Basel). 2018 Aug 10;9(8):396. doi: 10.3390/mi9080396.