PMID- 30460310
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20220330
IS  - 2150-5551 (Electronic)
IS  - 2311-6706 (Print)
IS  - 2150-5551 (Linking)
VI  - 9
IP  - 2
DP  - 2017
TI  - Fast Growth of Highly Ordered TiO(2) Nanotube Arrays on Si Substrate under 
      High-Field Anodization.
PG  - 13
LID - 10.1007/s40820-016-0114-4 [doi]
LID - 13
AB  - ABSTRACT: Highly ordered TiO(2) nanotube arrays (NTAs) on Si substrate possess 
      broad applications due to its high surface-to-volume ratio and novel 
      functionalities, however, there are still some challenges on facile synthesis. 
      Here, we report a simple and cost-effective high-field (90-180 V) anodization 
      method to grow highly ordered TiO(2) NTAs on Si substrate, and investigate the 
      effect of anodization time, voltage, and fluoride content on the formation of 
      TiO(2) NTAs. The current density-time curves, recorded during anodization 
      processes, can be used to determine the optimum anodization time. It is found 
      that the growth rate of TiO(2) NTAs is improved significantly under high field, 
      which is nearly 8 times faster than that under low fields (40-60 V). The length 
      and growth rate of the nanotubes are further increased with the increase of 
      fluoride content in the electrolyte. GRAPHICAL ABSTRACT: Highly ordered TiO(2) 
      nanotube arrays (NTAs) on Si substrate have been fabricated by high-field 
      anodization method. A high voltage (90-180 V) leads to a high growth rate of 
      TiO(2) NTAs (35-47 nm s(-1)), which is nearly 8 times faster than the growth rate 
      under low fields (40-60 V). Furthermore, the current density-time curves recorded 
      during the anodization provide a facial method to determine the optimal 
      anodization parameters, leading to an easy obtaining of the desired nanotubes.
FAU - Song, Jingnan
AU  - Song J
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Zheng, Maojun
AU  - Zheng M
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
AD  - 2Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093 
      People's Republic of China. GRID: grid.41156.37. ISNI: 000000012314964X
FAU - Zhang, Bin
AU  - Zhang B
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Li, Qiang
AU  - Li Q
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Wang, Faze
AU  - Wang F
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Ma, Liguo
AU  - Ma L
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Li, Yanbo
AU  - Li Y
AD  - 3Institute of Fundamental and Frontier Sciences, University of Electronic Science 
      and Technology of China, Chengdu, 610054 People's Republic of China. GRID: 
      grid.54549.39. ISNI: 0000000403694060
FAU - Zhu, Changqing
AU  - Zhu C
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Ma, Li
AU  - Ma L
AD  - 4School of Chemistry and Chemical Technology, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
FAU - Shen, Wenzhong
AU  - Shen W
AD  - 1Key Laboratory of Artificial Structure and Quantum Control, Ministry of 
      Education, Department of Physics and Astronomy, Shanghai Jiao Tong University, 
      Shanghai, 200240 People's Republic of China. GRID: grid.16821.3c. ISNI: 
      0000000403688293
LA  - eng
PT  - Journal Article
DEP - 20161109
PL  - Germany
TA  - Nanomicro Lett
JT  - Nano-micro letters
JID - 101727940
PMC - PMC6223787
OTO - NOTNLM
OT  - Anodization
OT  - Controllable preparation
OT  - High field
OT  - Si substrate
OT  - TiO2 nanotube arrays
EDAT- 2017/01/01 00:00
MHDA- 2017/01/01 00:01
PMCR- 2016/11/09
CRDT- 2018/11/22 06:00
PHST- 2016/07/23 00:00 [received]
PHST- 2016/09/17 00:00 [accepted]
PHST- 2018/11/22 06:00 [entrez]
PHST- 2017/01/01 00:00 [pubmed]
PHST- 2017/01/01 00:01 [medline]
PHST- 2016/11/09 00:00 [pmc-release]
AID - 114 [pii]
AID - 10.1007/s40820-016-0114-4 [doi]
PST - ppublish
SO  - Nanomicro Lett. 2017;9(2):13. doi: 10.1007/s40820-016-0114-4. Epub 2016 Nov 9.