PMID- 30464966
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231004
IS  - 2150-5551 (Electronic)
IS  - 2311-6706 (Print)
IS  - 2150-5551 (Linking)
VI  - 7
IP  - 3
DP  - 2015
TI  - Advances in MoS(2)-Based Field Effect Transistors (FETs).
PG  - 203-218
LID - 10.1007/s40820-015-0034-8 [doi]
AB  - This paper reviews the original achievements and advances regarding the field 
      effect transistor (FET) fabricated from one of the most studied transition metal 
      dichalcogenides: two-dimensional MoS(2). Not like graphene, which is highlighted 
      by a gapless Dirac cone band structure, Monolayer MoS(2) is featured with a 
      1.9 eV gapped direct energy band thus facilitates convenient electronic and/or 
      optoelectronic modulation of its physical properties in FET structure. Indeed, 
      many MoS(2) devices based on FET architecture such as phototransistors, memory 
      devices, and sensors have been studied and extraordinary properties such as 
      excellent mobility, ON/OFF ratio, and sensitivity of these devices have been 
      exhibited. However, further developments in FET device applications depend a lot 
      on if novel physics would be involved in them. In this review, an overview on 
      advances and developments in the MoS(2)-based FETs are presented. Engineering of 
      MoS(2)-based FETs will be discussed in details for understanding contact physics, 
      formation of gate dielectric, and doping strategies. Also reported are 
      demonstrations of device behaviors such as low-frequency noise and photoresponse 
      in MoS(2)-based FETs, which is crucial for developing electronic and 
      optoelectronic devices.
FAU - Tong, Xin
AU  - Tong X
AD  - 1Institute of Fundamental and Frontier Sciences, University of Electronic Science 
      and Technology of China, Chengdu, 610054 People's Republic of China. GRID: 
      grid.54549.39. ISNI: 0000000403694060
FAU - Ashalley, Eric
AU  - Ashalley E
AD  - 1Institute of Fundamental and Frontier Sciences, University of Electronic Science 
      and Technology of China, Chengdu, 610054 People's Republic of China. GRID: 
      grid.54549.39. ISNI: 0000000403694060
FAU - Lin, Feng
AU  - Lin F
AD  - 1Institute of Fundamental and Frontier Sciences, University of Electronic Science 
      and Technology of China, Chengdu, 610054 People's Republic of China. GRID: 
      grid.54549.39. ISNI: 0000000403694060
FAU - Li, Handong
AU  - Li H
AD  - 2State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054 People's Republic 
      of China. GRID: grid.54549.39. ISNI: 0000000403694060
FAU - Wang, Zhiming M
AU  - Wang ZM
AD  - 1Institute of Fundamental and Frontier Sciences, University of Electronic Science 
      and Technology of China, Chengdu, 610054 People's Republic of China. GRID: 
      grid.54549.39. ISNI: 0000000403694060
AD  - 2State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054 People's Republic 
      of China. GRID: grid.54549.39. ISNI: 0000000403694060
LA  - eng
PT  - Journal Article
PT  - Review
DEP - 20150213
PL  - Germany
TA  - Nanomicro Lett
JT  - Nano-micro letters
JID - 101727940
PMC - PMC6223905
OTO - NOTNLM
OT  - Low-frequency noise
OT  - MoS2 FETs engineering
OT  - MoS2 memory devices
OT  - MoS2 sensors
OT  - Optical properties
EDAT- 2015/01/01 00:00
MHDA- 2015/01/01 00:01
PMCR- 2015/02/13
CRDT- 2018/11/23 06:00
PHST- 2014/11/03 00:00 [received]
PHST- 2015/01/21 00:00 [accepted]
PHST- 2018/11/23 06:00 [entrez]
PHST- 2015/01/01 00:00 [pubmed]
PHST- 2015/01/01 00:01 [medline]
PHST- 2015/02/13 00:00 [pmc-release]
AID - 34 [pii]
AID - 10.1007/s40820-015-0034-8 [doi]
PST - ppublish
SO  - Nanomicro Lett. 2015;7(3):203-218. doi: 10.1007/s40820-015-0034-8. Epub 2015 Feb 
      13.