PMID- 30477207
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 9
IP  - 12
DP  - 2018 Nov 24
TI  - Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of 
      Transistor Cells.
LID - 10.3390/mi9120619 [doi]
LID - 619
AB  - In this paper, we present a Ku-band 50 W internally-matched power amplifier that 
      asymmetrically combines the power transistor cells of the GaN high electron 
      mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed 
      using a large-signal transistor cell model in the foundry process, and asymmetric 
      power combining, which consists of a slit pattern, oblique wire bonding and an 
      asymmetric T-junction, is applied to obtain the amplitude/phase balance of the 
      combined signals at the transistor cell combining position. Input and output 
      matching circuits are implemented using a thin film process on a titanate 
      substrate and an alumina substrate with the relative dielectric constants of 40 
      and 9.8, respectively. The pulsed measurement of a 330 mus pulse period and 6% 
      duty cycle shows the maximum saturated output power of 57 to 66 W, drain 
      efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation 
      from 16.2 to 16.8 GHz.
FAU - Kim, Seil
AU  - Kim S
AD  - Department of Radio Science and Engineering, Chungnam National University, 
      Daejeon 34134, Korea. ksl4896@naver.com.
FAU - Lee, Min-Pyo
AU  - Lee MP
AD  - Department of Radio Science and Engineering, Chungnam National University, 
      Daejeon 34134, Korea. dignitymp20@naver.com.
FAU - Hong, Sung-June
AU  - Hong SJ
AD  - Department of Radio Science and Engineering, Chungnam National University, 
      Daejeon 34134, Korea. hsj_1006@naver.com.
FAU - Kim, Dong-Wook
AU  - Kim DW
AUID- ORCID: 0000-0003-1913-4714
AD  - Department of Radio Science and Engineering, Chungnam National University, 
      Daejeon 34134, Korea. dwkim21c@cnu.ac.kr.
LA  - eng
PT  - Journal Article
DEP - 20181124
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC6316699
OTO - NOTNLM
OT  - GaN high electron mobility transistor (HEMT)
OT  - Ku-band
OT  - amplitude balance
OT  - asymmetric power combining
OT  - phase balance
OT  - power amplifier
COIS- The authors declare no conflict of interest.
EDAT- 2018/11/28 06:00
MHDA- 2018/11/28 06:01
PMCR- 2018/11/24
CRDT- 2018/11/28 06:00
PHST- 2018/10/12 00:00 [received]
PHST- 2018/11/10 00:00 [revised]
PHST- 2018/11/20 00:00 [accepted]
PHST- 2018/11/28 06:00 [entrez]
PHST- 2018/11/28 06:00 [pubmed]
PHST- 2018/11/28 06:01 [medline]
PHST- 2018/11/24 00:00 [pmc-release]
AID - mi9120619 [pii]
AID - micromachines-09-00619 [pii]
AID - 10.3390/mi9120619 [doi]
PST - epublish
SO  - Micromachines (Basel). 2018 Nov 24;9(12):619. doi: 10.3390/mi9120619.