PMID- 30508372
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20190410
LR  - 20190410
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 10
IP  - 51
DP  - 2018 Dec 26
TI  - Oxidation-Induced Changes in the ALD-Al(2)O(3)/InAs(100) Interface and Control of 
      the Changes for Device Processing.
PG  - 44932-44940
LID - 10.1021/acsami.8b17843 [doi]
AB  - InAs crystals are emerging materials for various devices like radio frequency 
      transistors and infrared sensors. Control of oxidation-induced changes is 
      essential for decreasing amounts of the harmful InAs surface (or interface) 
      defects because it is hard to avoid the energetically favored oxidation of InAs 
      surface parts in device processing. We have characterized atomic-layer-deposition 
      (ALD) grown Al(2)O(3)/InAs interfaces, preoxidized differently, with synchrotron 
      hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, 
      scanning tunneling microscopy, and time-of-flight elastic recoil detection 
      analysis. The chemical environment and core-level shifts are clarified for 
      well-embedded InAs interfaces (12 nm Al(2)O(3)) to avoid, in particular, effects 
      of a significant potential change at the vacuum-solid interface. High-resolution 
      As 3d spectra reveal that the Al(2)O(3)/InAs interface, which was sputter-cleaned 
      before ALD, includes +1.0 eV shift, whereas As 3d of the preoxidized (3 x 1)-O 
      interface exhibits a shift of -0.51 eV. The measurements also indicate that an 
      As(2)O(3) type structure is not crucial in controlling defect densities. 
      Regarding In 4d measurements, the sputtered InAs interface includes only a +0.29 
      eV shift, while the In 4d shift around -0.3 eV is found to be inherent for the 
      crystalline oxidized interfaces. Thus, the negative shifts, which have been 
      usually associated with dangling bonds, are not necessarily an indication of such 
      point defects as previously expected. In contrast, the negative shifts can arise 
      from bonding with O atoms. Therefore, specific care should be directed in 
      determining the bulk-component positions in photoelectron studies. Finally, we 
      present an approach to transfer the InAs oxidation results to a device process of 
      high electron mobility transistors (HEMT) using an As-rich III-V surface and In 
      deposition. The approach is found to decrease a gate leakage current of HEMT 
      without losing the gate controllability.
FAU - Tuominen, Marjukka
AU  - Tuominen M
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Makela, Jaakko
AU  - Makela J
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Yasir, Muhammad
AU  - Yasir M
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Dahl, Johnny
AU  - Dahl J
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Granroth, Sari
AU  - Granroth S
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Lehtio, Juha-Pekka
AU  - Lehtio JP
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Felix, Roberto
AU  - Felix R
AUID- ORCID: 0000-0002-3620-9899
AD  - Renewable Energies , Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH , 
      DE-14109 Berlin , Germany.
FAU - Laukkanen, Pekka
AU  - Laukkanen P
AUID- ORCID: 0000-0003-4220-985X
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Kuzmin, Mikhail
AU  - Kuzmin M
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Laitinen, Mikko
AU  - Laitinen M
AD  - Department of Physics , University of Jyvaskyla , FI-40014 Jyvaskyla , Finland.
FAU - Punkkinen, Marko P J
AU  - Punkkinen MPJ
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Hedman, Hannu-Pekka
AU  - Hedman HP
AD  - Department of Future Technologies , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Punkkinen, Risto
AU  - Punkkinen R
AD  - Department of Future Technologies , University of Turku , FI-20014 Turku , 
      Finland.
FAU - Polojarvi, Ville
AU  - Polojarvi V
AD  - Optoelectronics Research Centre , Tampere University of Technology , FI-33101 
      Tampere , Finland.
FAU - Lyytikainen, Jari
AU  - Lyytikainen J
AD  - Optoelectronics Research Centre , Tampere University of Technology , FI-33101 
      Tampere , Finland.
FAU - Tukiainen, Antti
AU  - Tukiainen A
AD  - Optoelectronics Research Centre , Tampere University of Technology , FI-33101 
      Tampere , Finland.
FAU - Guina, Mircea
AU  - Guina M
AUID- ORCID: 0000-0002-9317-8187
AD  - Optoelectronics Research Centre , Tampere University of Technology , FI-33101 
      Tampere , Finland.
FAU - Kokko, Kalevi
AU  - Kokko K
AD  - Department of Physics and Astronomy , University of Turku , FI-20014 Turku , 
      Finland.
LA  - eng
PT  - Journal Article
DEP - 20181214
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - III-V semiconductor
OT  - InAs
OT  - atomic layer deposition
OT  - oxidation
OT  - photoelectron
OT  - synchrotron
EDAT- 2018/12/07 06:00
MHDA- 2018/12/07 06:01
CRDT- 2018/12/04 06:00
PHST- 2018/12/07 06:00 [pubmed]
PHST- 2018/12/07 06:01 [medline]
PHST- 2018/12/04 06:00 [entrez]
AID - 10.1021/acsami.8b17843 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2018 Dec 26;10(51):44932-44940. doi: 
      10.1021/acsami.8b17843. Epub 2018 Dec 14.