PMID- 30558127
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200929
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 9
IP  - 12
DP  - 2018 Dec 14
TI  - Model Development for Threshold Voltage Stability Dependent on High Temperature 
      Operations in Wide-Bandgap GaN-Based HEMT Power Devices.
LID - 10.3390/mi9120658 [doi]
LID - 658
AB  - Temperature-dependent threshold voltage (V(th)) stability is a significant issue 
      in the practical application of semi-conductor power devices, especially when 
      they are undergoing a repeated high-temperature operation condition. The V(th) 
      analytical model and its stability are dependent on high-temperature operations 
      in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor 
      (HEMT) devices that were investigated in this work. The temperature effects on 
      the physical parameters-such as barrier height, conduction band, and polarization 
      charge-were analysed to understand the mechanism of V(th) stability. The V(th) 
      analytical model under high-temperature operation was then proposed and developed 
      to study the measurement temperatures and repeated rounds dependent on V(th) 
      stability. The validity of the model was verified by comparing the theoretical 
      calculation data with the experimental measurement and technology computer-aided 
      design (TCAD) simulation results. This work provides an effective theoretical 
      reference on the V(th) stability of power devices in practical, high-temperature 
      applications.
FAU - Huang, Huolin
AU  - Huang H
AD  - School of Optoelectronic Engineering and Instrumentation Science, Dalian 
      University of Technology, Dalian 116024, China. hlhuang@dlut.edu.cn.
AD  - Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian 
      University of Technology, Dalian 116024, China. hlhuang@dlut.edu.cn.
FAU - Li, Feiyu
AU  - Li F
AD  - School of Optoelectronic Engineering and Instrumentation Science, Dalian 
      University of Technology, Dalian 116024, China. lifeiyu@mail.dlut.edu.cn.
FAU - Sun, Zhonghao
AU  - Sun Z
AD  - School of Optoelectronic Engineering and Instrumentation Science, Dalian 
      University of Technology, Dalian 116024, China. sunzhonghao@mail.dlut.edu.cn.
FAU - Cao, Yaqing
AU  - Cao Y
AD  - School of Optoelectronic Engineering and Instrumentation Science, Dalian 
      University of Technology, Dalian 116024, China. cyqtmxk@mail.dlut.edu.cn.
LA  - eng
GR  - 51607022/National Science Foundation of China/
GR  - DUT17LK13/Fundamental Research Funds for the Central Universities/
PT  - Journal Article
DEP - 20181214
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC6315632
OTO - NOTNLM
OT  - analytical model
OT  - gallium nitride (GaN)
OT  - high electron mobility transistors (HEMTs)
OT  - high-temperature operation
OT  - threshold voltage (Vth) stability
COIS- The authors declare no conflict of interest.
EDAT- 2018/12/19 06:00
MHDA- 2018/12/19 06:01
PMCR- 2018/12/14
CRDT- 2018/12/19 06:00
PHST- 2018/11/23 00:00 [received]
PHST- 2018/11/23 00:00 [revised]
PHST- 2018/12/10 00:00 [accepted]
PHST- 2018/12/19 06:00 [entrez]
PHST- 2018/12/19 06:00 [pubmed]
PHST- 2018/12/19 06:01 [medline]
PHST- 2018/12/14 00:00 [pmc-release]
AID - mi9120658 [pii]
AID - micromachines-09-00658 [pii]
AID - 10.3390/mi9120658 [doi]
PST - epublish
SO  - Micromachines (Basel). 2018 Dec 14;9(12):658. doi: 10.3390/mi9120658.