PMID- 30715045
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 9
IP  - 11
DP  - 2018 Oct 25
TI  - AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN 
      Substrates with Regrown Ohmic Contacts.
LID - 10.3390/mi9110546 [doi]
LID - 546
AB  - AlGaN/GaN high electron mobility transistors on semi-insulating bulk 
      ammonothermal GaN have been investigated. By application of regrown ohmic 
      contacts, the problem with obtaining low resistance ohmic contacts to 
      low-dislocation high electron mobility transistor (HEMT) structures was solved. 
      The maximum output current was about 1 A/mm and contact resistances was in the 
      range of 0.3(-)0.6 Omega .mm. Good microwave performance was obtained due to the 
      absence of parasitic elements such as high access resistance.
FAU - Wojtasiak, Wojciech
AU  - Wojtasiak W
AUID- ORCID: 0000-0002-6422-7154
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. wwojtas@ire.pw.edu.pl.
FAU - Goralczyk, Marcin
AU  - Goralczyk M
AUID- ORCID: 0000-0001-7313-442X
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. M.Goralczyk@ire.pw.edu.pl.
FAU - Gryglewski, Daniel
AU  - Gryglewski D
AUID- ORCID: 0000-0001-6824-9599
AD  - Institute of Radioelectronics and Multimedia Technology, Warsaw University of 
      Technology, Nowowiejska 15/19, 00-662 Warsaw, Poland. dgrygle@ire.pw.edu.pl.
FAU - Zajac, Marcin
AU  - Zajac M
AD  - Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, 
      Sokolowska 29/37, 01-142 Warsaw, Poland. zajac@ammono.com.
FAU - Kucharski, Robert
AU  - Kucharski R
AD  - Ammono Lab, Institute of High Pressure Physics, Polish Academy of Sciences, 
      Sokolowska 29/37, 01-142 Warsaw, Poland. kucharski@ammono.com.
FAU - Prystawko, Pawel
AU  - Prystawko P
AD  - TopGaN Ltd., Sokolowska 29/37, 01-142 Warsaw, Poland. 
      pawel.prystawko@unipress.waw.pl.
AD  - Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 
      01-142 Warsaw, Poland. pawel.prystawko@unipress.waw.pl.
FAU - Piotrowska, Anna
AU  - Piotrowska A
AD  - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. 
      ania@ite.waw.pl.
FAU - Ekielski, Marek
AU  - Ekielski M
AD  - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. 
      ekielski@ite.waw.pl.
FAU - Kaminska, Eliana
AU  - Kaminska E
AD  - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. 
      eliana@ite.waw.pl.
FAU - Taube, Andrzej
AU  - Taube A
AD  - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. 
      ataube@ite.waw.pl.
FAU - Wzorek, Marek
AU  - Wzorek M
AD  - Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland. 
      mwzorek@ite.waw.pl.
LA  - eng
GR  - PBS1/A3/9/2012/Narodowe Centrum Badan i Rozwoju/
PT  - Journal Article
DEP - 20181025
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC6266852
OTO - NOTNLM
OT  - AlGaN/GaN
OT  - ammonothermal GaN
OT  - high electron mobility transistor (HEMT)
OT  - high electron mobility transistors
OT  - ohmic contact
OT  - power amplifier
OT  - regrown contact
COIS- The authors declare no conflict of interest.
EDAT- 2019/02/05 06:00
MHDA- 2019/02/05 06:01
PMCR- 2018/10/25
CRDT- 2019/02/05 06:00
PHST- 2018/09/30 00:00 [received]
PHST- 2018/10/20 00:00 [revised]
PHST- 2018/10/21 00:00 [accepted]
PHST- 2019/02/05 06:00 [entrez]
PHST- 2019/02/05 06:00 [pubmed]
PHST- 2019/02/05 06:01 [medline]
PHST- 2018/10/25 00:00 [pmc-release]
AID - mi9110546 [pii]
AID - micromachines-09-00546 [pii]
AID - 10.3390/mi9110546 [doi]
PST - epublish
SO  - Micromachines (Basel). 2018 Oct 25;9(11):546. doi: 10.3390/mi9110546.