PMID- 30755527 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20231006 IS - 1091-6490 (Electronic) IS - 0027-8424 (Print) IS - 0027-8424 (Linking) VI - 116 IP - 9 DP - 2019 Feb 26 TI - Additive manufacturing of patterned 2D semiconductor through recyclable masked growth. PG - 3437-3442 LID - 10.1073/pnas.1816197116 [doi] AB - The 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of "2D"-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS(2)), in arbitrary patterns on insulating SiO(2)/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS(2) patterns. Our technique currently produces arbitrary monolayer MoS(2) patterns at a spatial resolution of 2 mum with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm(2) V(-1) s(-1) and on-off current ratio of 10(7)). Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics. FAU - Guo, Yunfan AU - Guo Y AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Shen, Pin-Chun AU - Shen PC AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Su, Cong AU - Su C AD - Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Lu, Ang-Yu AU - Lu AY AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Hempel, Marek AU - Hempel M AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Han, Yimo AU - Han Y AD - School of Applied & Engineering Physics, Cornell University, Ithaca, NY 14850. FAU - Ji, Qingqing AU - Ji Q AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Lin, Yuxuan AU - Lin Y AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Shi, Enzheng AU - Shi E AD - Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907. FAU - McVay, Elaine AU - McVay E AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Dou, Letian AU - Dou L AD - Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907. FAU - Muller, David A AU - Muller DA AD - School of Applied & Engineering Physics, Cornell University, Ithaca, NY 14850. FAU - Palacios, Tomas AU - Palacios T AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Li, Ju AU - Li J AD - Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139. FAU - Ling, Xi AU - Ling X AD - Department of Chemistry, Boston University, Boston, MA 02215; xiling@bu.edu jingkong@mit.edu. AD - Division of Materials Science and Engineering, Boston University, Boston, MA 02215. AD - The Photonics Center, Boston University, Boston, MA 02215. FAU - Kong, Jing AU - Kong J AUID- ORCID: 0000-0003-0551-1208 AD - Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139; xiling@bu.edu jingkong@mit.edu. LA - eng PT - Journal Article PT - Research Support, Non-U.S. Gov't PT - Research Support, U.S. Gov't, Non-P.H.S. DEP - 20190212 PL - United States TA - Proc Natl Acad Sci U S A JT - Proceedings of the National Academy of Sciences of the United States of America JID - 7505876 PMC - PMC6397508 OTO - NOTNLM OT - 2D semiconductor OT - growth mechanism OT - monolayer MoS2 OT - patterned growth OT - recyclable masked growth COIS- The authors declare no conflict of interest. EDAT- 2019/02/14 06:00 MHDA- 2019/02/14 06:01 PMCR- 2019/08/12 CRDT- 2019/02/14 06:00 PHST- 2019/02/14 06:00 [pubmed] PHST- 2019/02/14 06:01 [medline] PHST- 2019/02/14 06:00 [entrez] PHST- 2019/08/12 00:00 [pmc-release] AID - 1816197116 [pii] AID - 201816197 [pii] AID - 10.1073/pnas.1816197116 [doi] PST - ppublish SO - Proc Natl Acad Sci U S A. 2019 Feb 26;116(9):3437-3442. doi: 10.1073/pnas.1816197116. Epub 2019 Feb 12.