PMID- 30801011
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200225
IS  - 2375-2548 (Electronic)
IS  - 2375-2548 (Linking)
VI  - 5
IP  - 2
DP  - 2019 Feb
TI  - Probing vacancy behavior across complex oxide heterointerfaces.
PG  - eaau8467
LID - 10.1126/sciadv.aau8467 [doi]
LID - eaau8467
AB  - Oxygen vacancies ( VO** ) play a critical role as defects in complex oxides in 
      establishing functionality in systems including memristors, all-oxide 
      electronics, and electrochemical cells that comprise metal-insulator-metal or 
      complex oxide heterostructure configurations. Improving oxide-oxide interfaces 
      necessitates a direct, spatial understanding of vacancy distributions that define 
      electrochemically active regions. We show vacancies deplete over micrometer-level 
      distances in Nb-doped SrTiO(3) (Nb:SrTiO(3)) substrates due to deposition and 
      post-annealing processes. We convert the surface potential across a strontium 
      titanate/yttria-stabilized zirconia (STO/YSZ) heterostructured film to spatial 
      (<100 nm) vacancy profiles within STO using (T = 500 degrees C) in situ scanning probes 
      and semiconductor analysis. Oxygen scavenging occurring during pulsed laser 
      deposition reduces Nb:STO substantially, which partially reoxidizes in an 
      oxygen-rich environment upon cooling. These results (i) introduce the means to 
      spatially resolve quantitative vacancy distributions across oxide films and (ii) 
      indicate the mechanisms by which oxide thin films enhance and then deplete 
      vacancies within the underlying substrate.
FAU - Zhu, Jiaxin
AU  - Zhu J
AUID- ORCID: 0000-0002-0368-5792
AD  - Department of Mechanical and Industrial Engineering, University of 
      Massachusetts-Amherst, Amherst, MA 01003, USA.
FAU - Lee, Jung-Woo
AU  - Lee JW
AUID- ORCID: 0000-0001-7205-8525
AD  - Department of Materials Science and Engineering, University of Wisconsin-Madison, 
      Madison, WI 53706, USA.
FAU - Lee, Hyungwoo
AU  - Lee H
AD  - Department of Materials Science and Engineering, University of Wisconsin-Madison, 
      Madison, WI 53706, USA.
FAU - Xie, Lin
AU  - Xie L
AD  - Department of Chemical Engineering and Materials Science, University of 
      California, Irvine, Irvine, CA 92697, USA.
FAU - Pan, Xiaoqing
AU  - Pan X
AUID- ORCID: 0000-0002-0965-8568
AD  - Department of Chemical Engineering and Materials Science, University of 
      California, Irvine, Irvine, CA 92697, USA.
FAU - De Souza, Roger A
AU  - De Souza RA
AD  - Institute of Physical Chemistry, RWTH Aachen University, Aachen 52056, Germany.
FAU - Eom, Chang-Beom
AU  - Eom CB
AUID- ORCID: 0000-0002-8854-1439
AD  - Department of Materials Science and Engineering, University of Wisconsin-Madison, 
      Madison, WI 53706, USA.
FAU - Nonnenmann, Stephen S
AU  - Nonnenmann SS
AUID- ORCID: 0000-0002-5369-9279
AD  - Department of Mechanical and Industrial Engineering, University of 
      Massachusetts-Amherst, Amherst, MA 01003, USA.
LA  - eng
PT  - Journal Article
DEP - 20190222
PL  - United States
TA  - Sci Adv
JT  - Science advances
JID - 101653440
PMC - PMC6386560
EDAT- 2019/02/26 06:00
MHDA- 2019/02/26 06:01
PMCR- 2019/02/22
CRDT- 2019/02/26 06:00
PHST- 2018/07/20 00:00 [received]
PHST- 2019/01/11 00:00 [accepted]
PHST- 2019/02/26 06:00 [entrez]
PHST- 2019/02/26 06:00 [pubmed]
PHST- 2019/02/26 06:01 [medline]
PHST- 2019/02/22 00:00 [pmc-release]
AID - aau8467 [pii]
AID - 10.1126/sciadv.aau8467 [doi]
PST - epublish
SO  - Sci Adv. 2019 Feb 22;5(2):eaau8467. doi: 10.1126/sciadv.aau8467. eCollection 2019 
      Feb.