PMID- 30842466
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200309
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 9
IP  - 1
DP  - 2019 Mar 6
TI  - A Novel Graphene Metal Semi-Insulator Semiconductor Transistor and Its New 
      Super-Low Power Mechanism.
PG  - 3642
LID - 10.1038/s41598-019-40104-9 [doi]
LID - 3642
AB  - The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) 
      meets the problem of the Power Consumption (P(C)) can not be effecively deceased 
      guided by the Moore's Law as before. The GFET has the problem of the device can 
      not be effectively turned off, since the band-gap of the graphene is zero. To 
      solve these problems, noticing the amount of the carriers in the 2 dementional 
      semiconductor material is limited, we propose a 
      Matel-Semi-Insulator-Semiconductor Field-Effect-Transistor (MSIS-FET) to replace 
      the traditional MOS-FET. We verify our idea by fabricating the graphene MSIS-FETs 
      using the natural Aluminium-oxide (Al-oxide) as the semi-insulator gate 
      dielectric. From MSIS-FETs fabricated, we obtain following experimental results. 
      The graphene MSIS-FET is turned off very well, a recorded high Ids on/off ratio 
      of 5 x 10(7) is achieved. A saddle and close-loop shape transfer feature of 
      Ids-Vgs is obtained first time for transistors. A non-volatile memory 
      characteristics is observed. A carrier re-injection principle and a super-Low 
      P(C) mechanism for semiconductor devices and integrated circuits (ICs) are found 
      from the transfer feature of the graphene MSIS-FET. It is shown that the P(C) of 
      the semiconductor devices and (ICs) can be reduced by over three orders of 
      magnitude by using this new mechanism.
FAU - Li, Ping
AU  - Li P
AD  - State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054, P. R. China. 
      pli@uestc.edu.cn.
FAU - Zeng, R Z
AU  - Zeng RZ
AD  - State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
FAU - Liao, Y B
AU  - Liao YB
AD  - State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
FAU - Zhang, Q W
AU  - Zhang QW
AD  - State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
FAU - Zhou, J H
AU  - Zhou JH
AD  - State Key Laboratory of Electronic Thin Films and Integrated Devices, University 
      of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
LA  - eng
PT  - Journal Article
DEP - 20190306
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
PMC - PMC6403360
COIS- The authors declare no competing interests.
EDAT- 2019/03/08 06:00
MHDA- 2019/03/08 06:01
PMCR- 2019/03/06
CRDT- 2019/03/08 06:00
PHST- 2018/09/20 00:00 [received]
PHST- 2019/02/08 00:00 [accepted]
PHST- 2019/03/08 06:00 [entrez]
PHST- 2019/03/08 06:00 [pubmed]
PHST- 2019/03/08 06:01 [medline]
PHST- 2019/03/06 00:00 [pmc-release]
AID - 10.1038/s41598-019-40104-9 [pii]
AID - 40104 [pii]
AID - 10.1038/s41598-019-40104-9 [doi]
PST - epublish
SO  - Sci Rep. 2019 Mar 6;9(1):3642. doi: 10.1038/s41598-019-40104-9.