PMID- 30875194
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 11
IP  - 14
DP  - 2019 Apr 10
TI  - Adding Solvent into Ionic Liquid-Gated Transistor: The Anatomy of Enhanced Gating 
      Performance.
PG  - 13822-13830
LID - 10.1021/acsami.9b03433 [doi]
AB  - Most studies of ionic liquid (IL)-gated field effect transistors (FETs) focus on 
      the extremely large electric field and capacitance induced in liquid/solid 
      interfaces and correspondingly the significantly enhanced carrier density in 
      semiconductors, which can appreciably improve the gating performance. However, 
      how to boost the switching speed, another key property of gating performance of 
      FETs, has been rarely explored. In this work, the gating performance of 
      molybdenum disulfide (MoS(2)) FETs, gated by the mixtures of IL/organic solvent 
      (1-butyl-3-methylimidazolium tetrafluoroborate/acetonitrile, [Bmim][BF(4)]/ACN) 
      at different ion concentrations, is investigated for both dynamic and static 
      properties by a combination of molecular dynamics simulation and resistance 
      network analysis. Results reveal that organic solvent can speed up the IL 
      response time by a factor of about 40 times at the optimal ion concentration of 
      1.94 M, which is mainly attributed to the increased ionic conductivity of IL via 
      the addition of organic solvent. Meanwhile, the surface charge distribution of 
      MoS(2) becomes more homogenous after the addition of organic solvent, which 
      increases the conductivity of MoS(2) by up to 2.4 times. Surprisingly, the 
      optimal ion concentration for increased switching speed is nearly the same as 
      that for achieving the highest MoS(2) conductivity. Thus, our findings provide a 
      strategy to simultaneously improve the dynamic and static gating performance of 
      IL-gated FETs as well as a modeling technique to screen out the ideal ion 
      concentration.
FAU - Zhao, Wei
AU  - Zhao W
AUID- ORCID: 0000-0003-1497-9312
AD  - State Key Laboratory of Coal Combustion, School of Energy and Power Engineering , 
      Huazhong University of Science and Technology , Wuhan 430074 , China.
FAU - Bi, Sheng
AU  - Bi S
AD  - State Key Laboratory of Coal Combustion, School of Energy and Power Engineering , 
      Huazhong University of Science and Technology , Wuhan 430074 , China.
FAU - Zhang, Cheng
AU  - Zhang C
AUID- ORCID: 0000-0001-6531-4703
AD  - Department of Materials Science and Engineering , University of Tennessee , 
      Knoxville , Tennessee 37996 , United States.
FAU - Rack, Philip D
AU  - Rack PD
AUID- ORCID: 0000-0002-9964-3254
AD  - Department of Materials Science and Engineering , University of Tennessee , 
      Knoxville , Tennessee 37996 , United States.
AD  - Center for Nanophase Materials Sciences , Oak Ridge National Laboratory , Oak 
      Ridge , Tennessee 37831 , United States.
FAU - Feng, Guang
AU  - Feng G
AUID- ORCID: 0000-0001-6659-9181
AD  - State Key Laboratory of Coal Combustion, School of Energy and Power Engineering , 
      Huazhong University of Science and Technology , Wuhan 430074 , China.
AD  - Shenzhen Research Institute of Huazhong University of Science and Technology , 
      Shenzhen 518057 , China.
LA  - eng
PT  - Journal Article
DEP - 20190328
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
OTO - NOTNLM
OT  - charging dynamics
OT  - ionic liquid-gated transistor
OT  - molybdenum disulfide
OT  - organic solvent
OT  - switching speed
EDAT- 2019/03/16 06:00
MHDA- 2019/03/16 06:01
CRDT- 2019/03/16 06:00
PHST- 2019/03/16 06:00 [pubmed]
PHST- 2019/03/16 06:01 [medline]
PHST- 2019/03/16 06:00 [entrez]
AID - 10.1021/acsami.9b03433 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2019 Apr 10;11(14):13822-13830. doi: 
      10.1021/acsami.9b03433. Epub 2019 Mar 28.