PMID- 31013978 OWN - NLM STAT- PubMed-not-MEDLINE LR - 20200225 IS - 1424-8220 (Electronic) IS - 1424-8220 (Linking) VI - 19 IP - 8 DP - 2019 Apr 14 TI - A GaN-Based Wireless Monitoring System for High-Temperature Applications. LID - 10.3390/s19081785 [doi] LID - 1785 AB - A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) applications, especially those involving pressure and temperature sensors for aerospace in which the environmental temperature exceeds 350 degrees C. The presented system includes a front-end amplifying the sensed signal (gain of 50 V/V), followed by a novel analog-to-digital converter driving a modulator exploiting the load-shift keying technique. An oscillation frequency of 1.5 MHz is used to ensure a robust wireless transmission through metallic-based barriers. To retrieve the data, a new demodulator architecture based on digital circuits is proposed. A 1 V amplitude difference can be detected between a high-amplitude (data-on) and a low-amplitude (data-off) of the received modulated signal. Two high-voltage supply levels (+14 V and -14 V) are required to operate the circuits. The layout of the proposed system was completed in a chip occupying 10.8 mm(2). The HT characterization and modeling of integrated GaN devices and passive components are performed to ensure the reliability of simulation results. The performance of the various proposed building blocks, as well as the whole system, have been validated by simulation over the projected wide operating temperature range (25-350 degrees C). FAU - Hassan, Ahmad AU - Hassan A AUID- ORCID: 0000-0002-2215-5375 AD - Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada. ahmad.hassan@polymtl.ca. FAU - Ali, Mohamed AU - Ali M AUID- ORCID: 0000-0002-7476-7920 AD - Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada. mohamed.ali@polymtl.ca. AD - Microelectronics Department, Electronics Research Institute, Cairo 12622, Egypt. mohamed.ali@polymtl.ca. FAU - Trigui, Aref AU - Trigui A AD - Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada. aref.trigui@gmail.com. FAU - Savaria, Yvon AU - Savaria Y AD - Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada. yvon.savaria@polymtl.ca. FAU - Sawan, Mohamad AU - Sawan M AUID- ORCID: 0000-0002-4137-7272 AD - Department of Electrical Engineering, Polytechnique Montreal, QC H3T 1J4, Canada. mohamad.sawan@polymtl.ca. AD - School of Engineering, Westlake University, Hangzhou 310024, China. mohamad.sawan@polymtl.ca. AD - Institute of Advanced Study, Westlake Institute for Advanced Study, Hangzhou 310024, China. mohamad.sawan@polymtl.ca. LA - eng GR - STPGP463394/Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada/ GR - NA/CMC Microsystems/ GR - NA/National Research Council Canada/ GR - NA/Airbus/ GR - NA/SAFRAN/ PT - Journal Article DEP - 20190414 PL - Switzerland TA - Sensors (Basel) JT - Sensors (Basel, Switzerland) JID - 101204366 PMC - PMC6514704 OTO - NOTNLM OT - GaN HEMT OT - harsh environment OT - high-temperature applications OT - integrated circuits OT - wireless data transmission COIS- The authors declare no conflict of interest. EDAT- 2019/04/25 06:00 MHDA- 2019/04/25 06:01 PMCR- 2019/04/01 CRDT- 2019/04/25 06:00 PHST- 2019/03/05 00:00 [received] PHST- 2019/04/11 00:00 [revised] PHST- 2019/04/12 00:00 [accepted] PHST- 2019/04/25 06:00 [entrez] PHST- 2019/04/25 06:00 [pubmed] PHST- 2019/04/25 06:01 [medline] PHST- 2019/04/01 00:00 [pmc-release] AID - s19081785 [pii] AID - sensors-19-01785 [pii] AID - 10.3390/s19081785 [doi] PST - epublish SO - Sensors (Basel). 2019 Apr 14;19(8):1785. doi: 10.3390/s19081785.