PMID- 31026972
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20191120
IS  - 1533-4880 (Print)
IS  - 1533-4880 (Linking)
VI  - 19
IP  - 10
DP  - 2019 Oct 1
TI  - Low-Frequency Noise Characteristics in Multi-Layer WSe(2) Field Effect Transistors 
      with Different Contact Metals.
PG  - 6422-6428
LID - 10.1166/jnn.2019.17068 [doi]
AB  - In this work, we analyze characteristics of Ohmic, Schottky forward and reverse 
      contact through a low-frequency noise (LFN) measurement, combining two types of 
      metals (Pd and Au) as the source and drain (S/D) contacts that enable p-type 
      properties in multi-layer WSe(2) field effect transistors (FETs). The LFN is one of 
      the significant factors liming the performance of nano-scale devices such as 
      TMDCs FETs having large surface-to-volume ratio. In addition, the LFN analysis, 
      which relates to the device reliability, can help identify sensitive areas for 
      current transport and evaluate the analog circuit applicability. Theoretically, 
      the multi-layer WSe(2) has reasonable electron affinity and bandgap that can make 
      p-channel FET using the metal with a relatively high work-function. However, it 
      is experimentally confirmed that Schottky contact characteristics are exhibited 
      in the multi-layer WSe(2) FETs with various metals except Pd due to the metal Fermi 
      level pinning phenomenon. Mobility (mu(eff), ~87.5 cm(2)/V.s), one of the electrical 
      performance extracted from fabricated devices with Pd as S/D electrodes shows a 
      great difference from that (~0.572 cm(2)/V.s) of devices with Au as S/D electrodes. 
      The measured electrical characteristics show that a Schottky contact is formed at 
      an interface between Au and WSe(2) causing the higher LFN of the FETs than that of 
      device with Pd as S/D electrodes. This characteristic is also verified by 
      confirming the reduction of LFN due to the decreased effect of the Schottky 
      property as the drain bias is increased.
FAU - Kang, Won-Mook
AU  - Kang WM
AD  - Department of Electrical and Computer Engineering (EE) and Inter-University 
      Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, 
      South Korea.
FAU - Cho, In-Tak
AU  - Cho IT
AD  - Department of Electrical and Computer Engineering (EE) and Inter-University 
      Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, 
      South Korea.
FAU - Roh, Jeongkyun
AU  - Roh J
AD  - Department of Electrical and Computer Engineering (EE) and Inter-University 
      Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, 
      South Korea.
FAU - Lee, Changhee
AU  - Lee C
AD  - Department of Electrical and Computer Engineering (EE) and Inter-University 
      Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, 
      South Korea.
FAU - Lee, Jong-Ho
AU  - Lee JH
AD  - Department of Electrical and Computer Engineering (EE) and Inter-University 
      Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, 
      South Korea.
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
EDAT- 2019/04/28 06:00
MHDA- 2019/04/28 06:01
CRDT- 2019/04/28 06:00
PHST- 2019/04/28 06:00 [entrez]
PHST- 2019/04/28 06:00 [pubmed]
PHST- 2019/04/28 06:01 [medline]
AID - 10.1166/jnn.2019.17068 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2019 Oct 1;19(10):6422-6428. doi: 10.1166/jnn.2019.17068.