PMID- 31147847
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 14
IP  - 1
DP  - 2019 May 30
TI  - Light-Trapping Engineering for the Enhancements of Broadband and 
      Spectra-Selective Photodetection by Self-Assembled Dielectric Microcavity Arrays.
PG  - 187
LID - 10.1186/s11671-019-3023-x [doi]
LID - 187
AB  - Light manipulation has drawn great attention in photodetectors towards the 
      specific applications with broadband or spectra-selective enhancement in 
      photo-responsivity or conversion efficiency. In this work, a broadband light 
      regulation was realized in photodetectors with the improved spectra-selective 
      photo-responsivity by the optimally fabricated dielectric microcavity arrays 
      (MCAs) on the top of devices. Both experimental and theoretical results reveal 
      that the light absorption enhancement in the cavities is responsible for the 
      improved sensitivity in the detectors, which originated from the light 
      confinement of the whispering-gallery-mode (WGM) resonances and the subsequent 
      photon coupling into active layer through the leaky modes of resonances. In 
      addition, the absorption enhancements in specific wavelength regions were 
      controllably accomplished by manipulating the resonance properties through 
      varying the effective optical length of the cavities. Consequently, a 
      responsivity enhancement up to 25% within the commonly used optical communication 
      and sensing region (800 to 980 nm) was achieved in the MCA-decorated silicon 
      positive-intrinsic-negative (PIN) devices compared with the control ones. This 
      work well demonstrated that the leaky modes of WGM resonant dielectric cavity 
      arrays can effectively improve the light trapping and thus responsivity in 
      broadband or selective spectra for photodetection and will enable future 
      exploration of their applications in other photoelectric conversion devices.
FAU - Ying, Anni
AU  - Ying A
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - Liu, Lian
AU  - Liu L
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - Xu, Zhongyuan
AU  - Xu Z
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - Zhang, Chunquan
AU  - Zhang C
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - Chen, Ruihao
AU  - Chen R
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - You, Tiangui
AU  - You T
AD  - State Key Laboratory of Functional Material for Informatics, Shanghai Institute 
      of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 
      200000, China.
FAU - Ou, Xin
AU  - Ou X
AD  - State Key Laboratory of Functional Material for Informatics, Shanghai Institute 
      of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 
      200000, China.
FAU - Liang, Dongxue
AU  - Liang D
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
FAU - Chen, Wei
AU  - Chen W
AD  - Optoelectronic Division R & D Department, Xiamen Hualian Electronic Corp., Ltd., 
      Xiamen, 361005, Fujian, China.
FAU - Yin, Jun
AU  - Yin J
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China. jyin@xmu.edu.cn.
FAU - Li, Jing
AU  - Li J
AUID- ORCID: 0000-0003-4551-3515
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China. lijing@xmu.edu.cn.
FAU - Kang, Junyong
AU  - Kang J
AD  - Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient 
      Devices, Department of Physics/Pen-Tung Sah Institute of Micro-Nano Science and 
      Technology, Xiamen University, Xiamen, 361005, Fujian, China.
LA  - eng
PT  - Journal Article
DEP - 20190530
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC6542964
OTO - NOTNLM
OT  - Dielectric cavity
OT  - Leaky mode
OT  - Light trapping
OT  - Photodetectors
OT  - Self-assembly
COIS- The authors declare that they have no competing interests.
EDAT- 2019/05/31 06:00
MHDA- 2019/05/31 06:01
PMCR- 2019/05/30
CRDT- 2019/06/01 06:00
PHST- 2019/03/28 00:00 [received]
PHST- 2019/05/20 00:00 [accepted]
PHST- 2019/06/01 06:00 [entrez]
PHST- 2019/05/31 06:00 [pubmed]
PHST- 2019/05/31 06:01 [medline]
PHST- 2019/05/30 00:00 [pmc-release]
AID - 10.1186/s11671-019-3023-x [pii]
AID - 3023 [pii]
AID - 10.1186/s11671-019-3023-x [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2019 May 30;14(1):187. doi: 10.1186/s11671-019-3023-x.