PMID- 31165332
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 1931-7573 (Print)
IS  - 1556-276X (Electronic)
IS  - 1556-276X (Linking)
VI  - 14
IP  - 1
DP  - 2019 Jun 4
TI  - High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine 
      Ion Implantation in SiN(x) Passivation Layer.
PG  - 191
LID - 10.1186/s11671-019-3025-8 [doi]
LID - 191
AB  - In this study, we proposed and experimentally demonstrated a high breakdown 
      voltage (BV) and low dynamic ON-resistance (R(ON, D)) AlGaN/GaN high electron 
      mobility transistor (HEMT) by implanting fluorine ions in the thick SiN(x) 
      passivation layer between the gate and drain electrodes. Instead of the fluorine 
      ion implantation in the thin AlGaN barrier layer, the peak position and vacancy 
      distributions are far from the two-dimensional electron gas (2DEG) channel in the 
      case of fluorine ion implantation in the thick passivation layer, which 
      effectively suppresses the direct current (DC) static and pulsed dynamic 
      characteristic degradation. The fluorine ions in the passivation layer also 
      extend the depletion region and increase the average electric field (E-field) 
      strength between the gate and drain, leading to an enhanced BV. The BV of the 
      proposed HEMT increases to 803 V from 680 V of the conventional AlGaN/GaN HEMT 
      (Conv. HEMT) with the same dimensional parameters. The measured R(ON, D) of the 
      proposed HEMT is only increased by 23% at a high drain quiescent bias of 100 V, 
      while the R(ON, D) of the HEMT with fluorine ion implantation in the thin AlGaN 
      barrier layer is increased by 98%.
FAU - Yang, Chao
AU  - Yang C
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Luo, Xiaorong
AU  - Luo X
AUID- ORCID: 0000-0001-5973-3258
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China. xrluo@uestc.edu.cn.
FAU - Sun, Tao
AU  - Sun T
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Zhang, Anbang
AU  - Zhang A
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Ouyang, Dongfa
AU  - Ouyang D
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Deng, Siyu
AU  - Deng S
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Wei, Jie
AU  - Wei J
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
FAU - Zhang, Bo
AU  - Zhang B
AD  - School of Electronic Science and Engineering, State Key Laboratory of Electronic 
      Thin Films and Integrated Devices, University of Electronic Science and 
      Technology of China, Chengdu, 610054, China.
LA  - eng
GR  - 51677021/National Natural Science Foundation of China/
GR  - 61874149/National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20190604
PL  - United States
TA  - Nanoscale Res Lett
JT  - Nanoscale research letters
JID - 101279750
PMC - PMC6548790
OTO - NOTNLM
OT  - AlGaN/GaN HEMT
OT  - Breakdown voltage
OT  - Dynamic ON-resistance
OT  - Fluorine ion implantation
OT  - SiNx passivation layer
COIS- The authors declare that they have no competing interests.
EDAT- 2019/06/06 06:00
MHDA- 2019/06/06 06:01
PMCR- 2019/06/04
CRDT- 2019/06/06 06:00
PHST- 2019/03/15 00:00 [received]
PHST- 2019/05/20 00:00 [accepted]
PHST- 2019/06/06 06:00 [entrez]
PHST- 2019/06/06 06:00 [pubmed]
PHST- 2019/06/06 06:01 [medline]
PHST- 2019/06/04 00:00 [pmc-release]
AID - 10.1186/s11671-019-3025-8 [pii]
AID - 3025 [pii]
AID - 10.1186/s11671-019-3025-8 [doi]
PST - epublish
SO  - Nanoscale Res Lett. 2019 Jun 4;14(1):191. doi: 10.1186/s11671-019-3025-8.