PMID- 31212261
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20190715
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 30
IP  - 38
DP  - 2019 Sep 20
TI  - Al(2)O(3), Al doped ZnO and SnO(2) encapsulation of randomly oriented ZnO 
      nanowire networks for high performance and stable electrical devices.
PG  - 385202
LID - 10.1088/1361-6528/ab2aa5 [doi]
AB  - Two-dimensional randomly oriented nanowire (NW) networks, also called nanonets 
      (NNs), have remarkable advantages including low-cost integration, good 
      reproducibility and high sensitivity, which make them a promising material for 
      electronic devices. With this work, we focus on the study of ZnO NNs as channel 
      materials in field effect transistors (FETs). In our process, ZnO NWs were 
      assembled in NNs by the liquid filtration method and were integrated in 
      transistors, with the bottom-gate configuration, using simple technological 
      steps. Non-encapsulated devices exhibited state of the art performances but their 
      stability toward air exposure was poor. Using a proper encapsulation of the 
      nanonets, with cheap, abundant and non-toxic oxides, we demonstrate our ability 
      not only to stabilize their electrical properties, but also to enhance 
      performance to values never reach before for ZnO NW-based transistors. Our best 
      FETs exhibit a low Off-current while maintaining a very good On-current, which 
      results in a I (on)/I (off) ratio exceeding 10(6) for a drain voltage of 5 V. The 
      behavior of these ZnO NN-based FETs was studied for three different encapsulation 
      materials, alumina (Al(2)O(3)), tin oxide (SnO(2)) and Al-doped ZnO (AZO). These 
      results prove that ZnO NNs are highly promising materials for an easy and 
      low-cost integration into FETs.
FAU - Morisot, F
AU  - Morisot F
AD  - Univ. Grenoble Alpes, CNRS, Grenoble INP*, LMGP, F-38000 Grenoble, France. Univ. 
      Grenoble Alpes, CNRS, Grenoble INP*, IMEP-LaHC, F-38000 Grenoble, France.
FAU - Nguyen, V H
AU  - Nguyen VH
FAU - Montemont, C
AU  - Montemont C
FAU - Maindron, T
AU  - Maindron T
FAU - Munoz-Rojas, D
AU  - Munoz-Rojas D
FAU - Mouis, M
AU  - Mouis M
FAU - Langlet, M
AU  - Langlet M
FAU - Ternon, C
AU  - Ternon C
LA  - eng
PT  - Journal Article
DEP - 20190618
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
EDAT- 2019/06/19 06:00
MHDA- 2019/06/19 06:01
CRDT- 2019/06/19 06:00
PHST- 2019/06/19 06:00 [pubmed]
PHST- 2019/06/19 06:01 [medline]
PHST- 2019/06/19 06:00 [entrez]
AID - 10.1088/1361-6528/ab2aa5 [doi]
PST - ppublish
SO  - Nanotechnology. 2019 Sep 20;30(38):385202. doi: 10.1088/1361-6528/ab2aa5. Epub 
      2019 Jun 18.