PMID- 31247141
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20190923
IS  - 1936-086X (Electronic)
IS  - 1936-0851 (Linking)
VI  - 13
IP  - 7
DP  - 2019 Jul 23
TI  - MoTe(2) Lateral Homojunction Field-Effect Transistors Fabricated using 
      Flux-Controlled Phase Engineering.
PG  - 8035-8046
LID - 10.1021/acsnano.9b02785 [doi]
AB  - The coexistence of metallic and semiconducting polymorphs in transition-metal 
      dichalcogenides (TMDCs) can be utilized to solve the large contact resistance 
      issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal 
      (2H) molybdenum ditelluride (MoTe(2)) phase, metallic monoclinic (1T') MoTe(2) 
      phase, and their lateral homojunctions can be selectively synthesized in situ by 
      chemical vapor deposition due to the small free energy difference between the two 
      phases. Here, we have investigated, in detail, the structural and electrical 
      properties of in situ-grown lateral 2H/1T' MoTe(2) homojunctions grown using 
      flux-controlled phase engineering. Using atomic-resolution plan-view and 
      cross-sectional transmission electron microscopy analyses, we show that the round 
      regions of near-single-crystalline 2H-MoTe(2) grow out of a polycrystalline 
      1T'-MoTe(2) matrix. We further demonstrate the operation of MoTe(2) FETs made on 
      these in situ-grown lateral homojunctions with 1T' contacts. The use of a 1T' 
      phase as electrodes in MoTe(2) FETs effectively improves the device performance 
      by substantially decreasing the contact resistance. The contact resistance of 1T' 
      electrodes extracted from transfer length method measurements is 470 +/- 30 Omega.mum. 
      Temperature- and gate-voltage-dependent transport characteristics reveal a 
      flat-band barrier height of  approximately 30 +/- 10 meV at the lateral 2H/1T' interface that is 
      several times smaller and shows a stronger gate modulation, compared to the 
      metal/2H Schottky barrier height. The information learned from this analysis will 
      be critical to understanding the properties of MoTe(2) homojunction FETs for use 
      in memory and logic circuity applications.
FAU - Ma, Rui
AU  - Ma R
AD  - Department of Electrical and Computer Engineering , University of Minnesota , 
      Minneapolis , Minnesota 55455 , United States.
FAU - Zhang, Huairuo
AU  - Zhang H
AUID- ORCID: 0000-0002-1984-1200
AD  - Theiss Research, Inc. , La Jolla , California 92037 , United States.
AD  - Materials Science and Engineering Division , National Institute of Standards and 
      Technology (NIST) , Gaithersburg , Maryland 20899 , United States.
FAU - Yoo, Youngdong
AU  - Yoo Y
AD  - Department of Chemistry , Ajou University , Suwon 16499 , Korea.
FAU - Degregorio, Zachary Patrick
AU  - Degregorio ZP
AD  - Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 
      , United States.
FAU - Jin, Lun
AU  - Jin L
AD  - Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 
      , United States.
FAU - Golani, Prafful
AU  - Golani P
AD  - Department of Electrical and Computer Engineering , University of Minnesota , 
      Minneapolis , Minnesota 55455 , United States.
FAU - Ghasemi Azadani, Javad
AU  - Ghasemi Azadani J
AD  - Department of Electrical and Computer Engineering , University of Minnesota , 
      Minneapolis , Minnesota 55455 , United States.
FAU - Low, Tony
AU  - Low T
AUID- ORCID: 0000-0002-5759-5899
AD  - Department of Electrical and Computer Engineering , University of Minnesota , 
      Minneapolis , Minnesota 55455 , United States.
FAU - Johns, James E
AU  - Johns JE
AUID- ORCID: 0000-0001-6164-0384
AD  - Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 
      , United States.
FAU - Bendersky, Leonid A
AU  - Bendersky LA
AD  - Materials Science and Engineering Division , National Institute of Standards and 
      Technology (NIST) , Gaithersburg , Maryland 20899 , United States.
FAU - Davydov, Albert V
AU  - Davydov AV
AD  - Materials Science and Engineering Division , National Institute of Standards and 
      Technology (NIST) , Gaithersburg , Maryland 20899 , United States.
FAU - Koester, Steven J
AU  - Koester SJ
AUID- ORCID: 0000-0001-6104-1218
AD  - Department of Electrical and Computer Engineering , University of Minnesota , 
      Minneapolis , Minnesota 55455 , United States.
LA  - eng
PT  - Journal Article
DEP - 20190702
PL  - United States
TA  - ACS Nano
JT  - ACS nano
JID - 101313589
SB  - IM
OTO - NOTNLM
OT  - MoTe
OT  - Schottky barrier height
OT  - chemical vapor deposition
OT  - lateral homojunction
OT  - phase engineering
OT  - transition-metal dichalcogenide
EDAT- 2019/06/28 06:00
MHDA- 2019/06/28 06:01
CRDT- 2019/06/28 06:00
PHST- 2019/06/28 06:00 [pubmed]
PHST- 2019/06/28 06:01 [medline]
PHST- 2019/06/28 06:00 [entrez]
AID - 10.1021/acsnano.9b02785 [doi]
PST - ppublish
SO  - ACS Nano. 2019 Jul 23;13(7):8035-8046. doi: 10.1021/acsnano.9b02785. Epub 2019 
      Jul 2.