PMID- 31269635
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 10
IP  - 7
DP  - 2019 Jul 2
TI  - Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed 
      Buffer.
LID - 10.3390/mi10070444 [doi]
LID - 444
AB  - A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a 
      multi-recessed buffer (HGMRB) for high-energy-efficiency applications is 
      proposed, and the mechanism of the device is investigated using technology 
      computer aided design (TCAD) Sentaurus and advanced design system (ADS) 
      simulations. The gate of the new structure is 5 nm higher than the barrier layer, 
      and the buffer layer has two recessed regions in the buffer layer. The TCAD 
      simulation results show that the maximum drain saturation current and 
      transconductance of the HGMRB HEMT decreases slightly, but the breakdown voltage 
      increases by 16.7%, while the gate-to-source capacitance decreases by 17%. The 
      new structure has a better gain than the conventional HEMT. In radio frequency 
      (RF) simulation, the results show that the HGMRB HEMT has 90.8%, 89.3%, and 84.4% 
      power-added efficiency (PAE) at 600 MHz, 1.2 GHz, and 2.4 GHz, respectively, 
      which ensures a large output power density. Overall, the results show that the 
      HGMRB HEMT is a better prospect for high energy efficiency than the conventional 
      HEMT.
FAU - Zhu, Shunwei
AU  - Zhu S
AUID- ORCID: 0000-0002-9255-9885
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Jia, Hujun
AU  - Jia H
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China. 
      hjjia@mail.xidian.edu.cn.
FAU - Li, Tao
AU  - Li T
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Tong, Yibo
AU  - Tong Y
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Liang, Yuan
AU  - Liang Y
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Wang, Xingyu
AU  - Wang X
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Zeng, Tonghui
AU  - Zeng T
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
FAU - Yang, Yintang
AU  - Yang Y
AD  - School of Microelectronics, Xidian University, Xi'an 710071, China.
LA  - eng
PT  - Journal Article
DEP - 20190702
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC6680630
OTO - NOTNLM
OT  - GaN
OT  - HEMT
OT  - high gate
OT  - multi-recessed buffer
OT  - power density
OT  - power-added efficiency
COIS- The authors declare no conflicts of interest.
EDAT- 2019/07/05 06:00
MHDA- 2019/07/05 06:01
PMCR- 2019/07/02
CRDT- 2019/07/05 06:00
PHST- 2019/05/30 00:00 [received]
PHST- 2019/06/19 00:00 [revised]
PHST- 2019/06/24 00:00 [accepted]
PHST- 2019/07/05 06:00 [entrez]
PHST- 2019/07/05 06:00 [pubmed]
PHST- 2019/07/05 06:01 [medline]
PHST- 2019/07/02 00:00 [pmc-release]
AID - mi10070444 [pii]
AID - micromachines-10-00444 [pii]
AID - 10.3390/mi10070444 [doi]
PST - epublish
SO  - Micromachines (Basel). 2019 Jul 2;10(7):444. doi: 10.3390/mi10070444.