PMID- 31308450
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20231012
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 9
IP  - 1
DP  - 2019 Jul 15
TI  - Enhanced activity of highly conformal and layered tin sulfide (SnS(x)) prepared 
      by atomic layer deposition (ALD) on 3D metal scaffold towards high performance 
      supercapacitor electrode.
PG  - 10225
LID - 10.1038/s41598-019-46679-7 [doi]
LID - 10225
AB  - Layered Sn-based chalcogenides and heterostructures are widely used in batteries 
      and photocatalysis, but its utilizations in a supercapacitor is limited by its 
      structural instability and low conductivity. Here, SnS(x) thin films are directly 
      and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by 
      atomic layer deposition (ALD), using tetrakis(dimethylamino)tin [TDMASn, 
      ((CH(3))(2)N)(4)Sn] and H(2)S that serves as an electrode for supercapacitor 
      without any additional treatment. Two kinds of ALD-SnS(x) films grown at 160  degrees C 
      and 180  degrees C are investigated systematically by X-ray diffractometry, Raman 
      spectroscopy, X-ray photoelectron spectroscopy, and transmission electron 
      microscopy (TEM). All of the characterization results indicate that the films 
      deposited at 160  degrees C and 180  degrees C predominantly consist of hexagonal 
      structured-SnS(2) and orthorhombic-SnS phases, respectively. Moreover, the 
      high-resolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline 
      hexagonal-SnS(2) layered structure for the films grown at 160  degrees C. The double 
      layer capacitance with the composite electrode of SnS(x)@NF grown at 160  degrees C is 
      higher than that of SnS(x)@NF at 180  degrees C, while pseudocapacitive Faradaic 
      reactions are evident for both SnS(x)@NF electrodes. The superior performance as 
      an electrode is directly linked to the layered structure of SnS(2). Further, the 
      optimal thickness of ALD-SnS(x) thin film is found to be 60 nm for the composite 
      electrode of SnS(x)@NF grown at 160  degrees C by controlling the number of ALD cycles. 
      The optimized SnS(x)@NF electrode delivers an areal capacitance of 805.5 mF/cm(2) 
      at a current density of 0.5 mA/cm(2) and excellent cyclic stability over 5000 
      charge/discharge cycles.
FAU - Ansari, Mohd Zahid
AU  - Ansari MZ
AD  - School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 
      712-749, Republic of Korea.
FAU - Parveen, Nazish
AU  - Parveen N
AD  - Department of Chemistry, College of Science, King Faisal University, Al-Ahsa, 
      Saudi Arabia.
FAU - Nandi, Dip K
AU  - Nandi DK
AD  - School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 
      712-749, Republic of Korea.
FAU - Ramesh, Rahul
AU  - Ramesh R
AD  - School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 
      712-749, Republic of Korea.
FAU - Ansari, Sajid Ali
AU  - Ansari SA
AD  - Department of Physics, College of Science, King Faisal University, Al-Ahsa, Saudi 
      Arabia.
FAU - Cheon, Taehoon
AU  - Cheon T
AD  - School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 
      712-749, Republic of Korea.
AD  - Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science & 
      Technology, Sang-ri, Hyeonpung-myeon, Dalseong-gun, Daegu, 711-873, Republic of 
      Korea.
FAU - Kim, Soo-Hyun
AU  - Kim SH
AD  - School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 
      712-749, Republic of Korea. soohyun@ynu.ac.kr.
LA  - eng
PT  - Journal Article
DEP - 20190715
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC6629880
COIS- The authors declare no competing interests.
EDAT- 2019/07/17 06:00
MHDA- 2019/07/17 06:01
PMCR- 2019/07/15
CRDT- 2019/07/17 06:00
PHST- 2019/01/30 00:00 [received]
PHST- 2019/07/02 00:00 [accepted]
PHST- 2019/07/17 06:00 [entrez]
PHST- 2019/07/17 06:00 [pubmed]
PHST- 2019/07/17 06:01 [medline]
PHST- 2019/07/15 00:00 [pmc-release]
AID - 10.1038/s41598-019-46679-7 [pii]
AID - 46679 [pii]
AID - 10.1038/s41598-019-46679-7 [doi]
PST - epublish
SO  - Sci Rep. 2019 Jul 15;9(1):10225. doi: 10.1038/s41598-019-46679-7.