PMID- 31357733
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 9
IP  - 8
DP  - 2019 Jul 28
TI  - Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes 
      by Atomic Layer Deposition.
LID - 10.3390/nano9081085 [doi]
LID - 1085
AB  - As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) 
      have been extensively studied for use in field effect transistors (FETs). To 
      fabricate surround-gate FETs- which offer the best switching 
      performance-deposition of conformal, weakly-interacting dielectric layers is 
      necessary. This is challenging due to the chemically inert surface of CNTs and a 
      lack of nucleation sites-especially for defect-free CNTs. As a result, a 
      technique that enables integration of uniform high-k dielectrics, while 
      preserving the CNT's exceptional properties is required. In this work, we show a 
      method that enables conformal atomic layer deposition (ALD) of high-k dielectrics 
      on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to 
      TiO(2) under ambient conditions, a nucleation layer is formed for subsequent ALD 
      deposition of Al(2)O(3). The technique is easy to implement and is 
      VLSI-compatible. We show that the ALD coatings are uniform, continuous and 
      conformal, and Raman spectroscopy reveals that the technique does not induce 
      defects in the CNT. The resulting bilayer TiO(2)/Al(2)O(3) thin-film shows an 
      improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. 
      The electrical properties of back-gated and top-gated devices fabricated using 
      this method are presented.
FAU - Kemelbay, Aidar
AU  - Kemelbay A
AD  - School of Science and Technology, Nazarbayev University, 010000 Nur-Sultan, 
      Kazakhstan.
AD  - The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, 
      USA.
FAU - Tikhonov, Alexander
AU  - Tikhonov A
AD  - School of Science and Technology, Nazarbayev University, 010000 Nur-Sultan, 
      Kazakhstan.
FAU - Aloni, Shaul
AU  - Aloni S
AD  - The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, 
      USA.
FAU - Kuykendall, Tevye R
AU  - Kuykendall TR
AD  - The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, 
      USA. trkuykendall@lbl.gov.
LA  - eng
GR  - DE-AC02-05CH11231/U.S. Department of Energy/
PT  - Journal Article
DEP - 20190728
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC6723932
OTO - NOTNLM
OT  - TiO2
OT  - atomic layer deposition
OT  - carbon nanotube
OT  - dielectric
OT  - nucleation layer
COIS- The authors declare no conflict of interest.
EDAT- 2019/07/31 06:00
MHDA- 2019/07/31 06:01
PMCR- 2019/07/28
CRDT- 2019/07/31 06:00
PHST- 2019/07/01 00:00 [received]
PHST- 2019/07/21 00:00 [revised]
PHST- 2019/07/26 00:00 [accepted]
PHST- 2019/07/31 06:00 [entrez]
PHST- 2019/07/31 06:00 [pubmed]
PHST- 2019/07/31 06:01 [medline]
PHST- 2019/07/28 00:00 [pmc-release]
AID - nano9081085 [pii]
AID - nanomaterials-09-01085 [pii]
AID - 10.3390/nano9081085 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2019 Jul 28;9(8):1085. doi: 10.3390/nano9081085.