PMID- 31409001
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2079-4991 (Print)
IS  - 2079-4991 (Electronic)
IS  - 2079-4991 (Linking)
VI  - 9
IP  - 8
DP  - 2019 Aug 12
TI  - Improvement of the Bias Stress Stability in 2D MoS(2) and WS(2) Transistors with 
      a TiO(2) Interfacial Layer.
LID - 10.3390/nano9081155 [doi]
LID - 1155
AB  - The fermi-level pinning phenomenon, which occurs at the metal-semiconductor 
      interface, not only obstructs the achievement of high-performance field effect 
      transistors (FETs) but also results in poor long-term stability. This paper 
      reports on the improvement in gate-bias stress stability in two-dimensional (2D) 
      transition metal dichalcogenide (TMD) FETs with a titanium dioxide (TiO(2)) 
      interfacial layer inserted between the 2D TMDs (MoS(2) or WS(2)) and metal 
      electrodes. Compared to the control MoS(2), the device without the TiO(2) layer, 
      the TiO(2) interfacial layer deposited on 2D TMDs could lead to more effective 
      carrier modulation by simply changing the contact metal, thereby improving the 
      performance of the Schottky-barrier-modulated FET device. The TiO(2) layer could 
      also suppress the Fermi-level pinning phenomenon usually fixed to the 
      metal-semiconductor interface, resulting in an improvement in transistor 
      performance. Especially, the introduction of the TiO(2) layer contributed to 
      achieving stable device performance. Threshold voltage variation of MoS(2) and 
      WS(2) FETs with the TiO(2) interfacial layer was ~2 V and ~3.6 V, respectively. 
      The theoretical result of the density function theory validated that mid-gap 
      energy states created within the bandgap of 2D MoS(2) can cause a doping effect. 
      The simple approach of introducing a thin interfacial oxide layer offers a 
      promising way toward the implementation of high-performance 2D TMD-based logic 
      circuits.
FAU - Park, Woojin
AU  - Park W
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea.
FAU - Pak, Yusin
AU  - Pak Y
AUID- ORCID: 0000-0002-5444-6513
AD  - Department of Nanobio Materials and Electronics, GIST, 123 Cheomdan-gwagiro, 
      Buk-gu, Gwangju 61005, Korea.
FAU - Jang, Hye Yeon
AU  - Jang HY
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea.
FAU - Nam, Jae Hyeon
AU  - Nam JH
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea.
FAU - Kim, Tae Hyeon
AU  - Kim TH
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea.
FAU - Oh, Seyoung
AU  - Oh S
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea.
FAU - Choi, Sung Mook
AU  - Choi SM
AD  - Materials Center for Energy Department, Surface Technology Division, Korea 
      Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, 
      Gyeongnam 51508, Korea.
FAU - Kim, Yonghun
AU  - Kim Y
AD  - Materials Center for Energy Department, Surface Technology Division, Korea 
      Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, 
      Gyeongnam 51508, Korea.
FAU - Cho, Byungjin
AU  - Cho B
AUID- ORCID: 0000-0002-3885-8139
AD  - Department of Advanced Material Engineering, Chungbuk National University, 
      Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Korea. bjcho@chungbuk.ac.kr.
LA  - eng
PT  - Journal Article
DEP - 20190812
PL  - Switzerland
TA  - Nanomaterials (Basel)
JT  - Nanomaterials (Basel, Switzerland)
JID - 101610216
PMC - PMC6724147
OTO - NOTNLM
OT  - MoS2
OT  - WS2
OT  - bias stress stability
OT  - contact resistance
OT  - interfacial layer
COIS- The authors declare no conflict of interest.
EDAT- 2019/08/15 06:00
MHDA- 2019/08/15 06:01
PMCR- 2019/08/12
CRDT- 2019/08/15 06:00
PHST- 2019/07/11 00:00 [received]
PHST- 2019/08/01 00:00 [revised]
PHST- 2019/08/08 00:00 [accepted]
PHST- 2019/08/15 06:00 [entrez]
PHST- 2019/08/15 06:00 [pubmed]
PHST- 2019/08/15 06:01 [medline]
PHST- 2019/08/12 00:00 [pmc-release]
AID - nano9081155 [pii]
AID - nanomaterials-09-01155 [pii]
AID - 10.3390/nano9081155 [doi]
PST - epublish
SO  - Nanomaterials (Basel). 2019 Aug 12;9(8):1155. doi: 10.3390/nano9081155.