PMID- 31430726
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200306
IS  - 1361-6528 (Electronic)
IS  - 0957-4484 (Linking)
VI  - 30
IP  - 48
DP  - 2019 Nov 29
TI  - Electron radiation effects on the structural and electrical properties of MoS(2) 
      field effect transistors.
PG  - 485201
LID - 10.1088/1361-6528/ab3ce2 [doi]
AB  - The effects of space radiation on the structural and electrical properties of 
      MoS(2) field effect transistors (FETs) were investigated. The 1 MeV 
      electronically equivalent International Space Station (ISS) track was used to 
      apply fluence equivalent to the orbital for 10 (1.0 x 10(12) cm(-2)) and 30 years 
      (3.0 x 10(12) cm(-2)) using the AP8 and AE8 models. X-ray photoelectron 
      spectroscopy (XPS), Raman and photoluminescence (PL) spectra were recorded before 
      and after irradiation. Electron irradiation produced strong desulfurization 
      effects in MoS(2) FETs. The PL spectra before and after irradiation did not 
      change significantly, while the [Formula: see text] and A(1g) Raman modes were 
      red- and blue-shifted, respectively. The XPS results demonstrated a strong 
      desulfurization effect of the electron beam on MoS(2). This reduction indicates a 
      much higher amount of irradiation-induced S vacancies compared to Mo vacancies. 
      The electrical characteristics of the device were measured before and after 
      irradiation. The increase in the channel leakage current after irradiation was 
      attributed to the oxide trapping positive charges. MoS(2) FETs irradiated by the 
      electron-beam demonstrated a decreased current. This phenomenon can be attributed 
      to the combination of the states at the SiO(2)/MoS(2) interfaces and Coulomb 
      scattering. Our study provides a deeper understanding of the influence of 1 MeV 
      electron-beam irradiation on MoS(2)-based nano-electronic devices for future 
      space applications.
FAU - Li, Heyi
AU  - Li H
AD  - School of Materials Science and Engineering, Harbin Institute of Technology, 
      Harbin, 150001, People's Republic of China.
FAU - Liu, Chaoming
AU  - Liu C
FAU - Zhang, Yanqing
AU  - Zhang Y
FAU - Qi, Chunhua
AU  - Qi C
FAU - Wei, Yidan
AU  - Wei Y
FAU - Zhou, Jiaming
AU  - Zhou J
FAU - Wang, Tianqi
AU  - Wang T
FAU - Ma, Guoliang
AU  - Ma G
FAU - Tsai, Hsu-Sheng
AU  - Tsai HS
FAU - Dong, Shangli
AU  - Dong S
FAU - Huo, Mingxue
AU  - Huo M
LA  - eng
PT  - Journal Article
DEP - 20191129
PL  - England
TA  - Nanotechnology
JT  - Nanotechnology
JID - 101241272
SB  - IM
EDAT- 2019/08/21 06:00
MHDA- 2019/08/21 06:01
CRDT- 2019/08/21 06:00
PHST- 2019/08/20 00:00 [aheadofprint]
PHST- 2019/08/21 06:00 [pubmed]
PHST- 2019/08/21 06:01 [medline]
PHST- 2019/08/21 06:00 [entrez]
AID - 10.1088/1361-6528/ab3ce2 [doi]
PST - epublish
SO  - Nanotechnology. 2019 Nov 29;30(48):485201. doi: 10.1088/1361-6528/ab3ce2.