PMID- 31459236
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201001
IS  - 2470-1343 (Electronic)
IS  - 2470-1343 (Linking)
VI  - 3
IP  - 9
DP  - 2018 Sep 30
TI  - Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed 
      Organic Field-Effect Transistors.
PG  - 11278-11285
LID - 10.1021/acsomega.8b01629 [doi]
AB  - Poly(dimethylsiloxane) (PDMS) is a transparent and flexible elastomer which has a 
      myriad of applications in various fields including organic electronics. However, 
      the inherent hydrophobic nature and low surface energy of PDMS prevent its direct 
      use in many applications. It is seldom utilized as a gate dielectric in 
      solution-processed organic field effect transistors (OFETs). In this work, we 
      demonstrate a simple method, extended ultraviolet-ozone (UVO) treatment, to 
      modify the PDMS surface and effectively employ it in solution-processed OFETs as 
      a gate dielectric material. The modified PDMS surface shows enhanced wettability 
      and adherence to both polar and nonpolar liquids, which is contrary to the 
      generally observed hydrophilic nature of UVO-treated PDMS surfaces because of the 
      creation of polar functional groups. The morphological changes happening on the 
      PDMS surface as a result of extended UVO treatment play a major role in making 
      the surface suitable for all type of solvents discussed here. The contact angle 
      measurements are used to give qualitative evidence for this observation. The 
      modified PDMS is then used as a gate dielectric in solution-processed n- and 
      p-channel OFETs using [6,6]-phenyl-C61-butyric acid methyl ester (PC(60)BM) and 
      regioregular poly(3-hexylthiophene) (rr-P3HT) semiconductors, respectively.
FAU - Raveendran, Reshma
AU  - Raveendran R
AD  - School of Physics, Indian Institute of Science Education and 
      Research-Thiruvananthapuram, Maruthamala P O, Vithura, Thiruvananthapuram, Kerala 
      695551, India.
FAU - Namboothiry, Manoj A G
AU  - Namboothiry MAG
AD  - School of Physics, Indian Institute of Science Education and 
      Research-Thiruvananthapuram, Maruthamala P O, Vithura, Thiruvananthapuram, Kerala 
      695551, India.
LA  - eng
PT  - Journal Article
DEP - 20180917
PL  - United States
TA  - ACS Omega
JT  - ACS omega
JID - 101691658
PMC - PMC6645575
COIS- The authors declare no competing financial interest.
EDAT- 2019/08/29 06:00
MHDA- 2019/08/29 06:01
PMCR- 2018/09/17
CRDT- 2019/08/29 06:00
PHST- 2018/07/12 00:00 [received]
PHST- 2018/09/04 00:00 [accepted]
PHST- 2019/08/29 06:00 [entrez]
PHST- 2019/08/29 06:00 [pubmed]
PHST- 2019/08/29 06:01 [medline]
PHST- 2018/09/17 00:00 [pmc-release]
AID - 10.1021/acsomega.8b01629 [doi]
PST - epublish
SO  - ACS Omega. 2018 Sep 17;3(9):11278-11285. doi: 10.1021/acsomega.8b01629. 
      eCollection 2018 Sep 30.