PMID- 31486629
OWN - NLM
STAT- PubMed-not-MEDLINE
DCOM- 20191003
LR  - 20191007
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 11
IP  - 39
DP  - 2019 Oct 2
TI  - Electric Double-Layer Gating of Two-Dimensional Field-Effect Transistors Using a 
      Single-Ion Conductor.
PG  - 35879-35887
LID - 10.1021/acsami.9b11526 [doi]
AB  - Electric double-layer (EDL) gating using a custom-synthesized polyester 
      single-ion conductor (PE400-Li) is demonstrated on two-dimensional (2D) crystals 
      for the first time. The electronic properties of graphene and MoTe(2) 
      field-effect transistors (FETs) gated with the single-ion conductor are directly 
      compared to a poly(ethylene oxide) dual-ion conductor (PEO:CsClO(4)). The anions 
      in the single-ion conductor are covalently bound to the backbone of the polymer, 
      leaving only the cations free to form an EDL at the negative electrode and a 
      corresponding cationic depletion layer at the positive electrode. Because the 
      cations are mobile in both the single- and dual-ion conductors, a similar 
      enhancement of the n-branch is observed in both graphene and MoTe(2). 
      Specifically, the single-ion conductor decreases the subthreshold swing in the 
      n-branch of the bare MoTe(2) FET from 5000 to 250 mV/dec and increases the 
      current density and on/off ratio by two orders of magnitude. However, the 
      single-ion conductor suppressed the p-branch in both the graphene and the MoTe(2) 
      FETs, and finite element modeling of ion transport shows that this result is 
      unique to single-ion conductor gating in combination with an asymmetric 
      gate/channel geometry. Both the experiments and modeling suggest that single-ion 
      conductor-gated FETs can achieve sheet densities up to 10(14) cm(-2), which 
      corresponds to a charge density that would theoretically be sufficient to induce 
      several percent strain in monolayer 2D crystals and potentially induce a 
      semiconductor-to-metal phase transition in MoTe(2).
FAU - Xu, Ke
AU  - Xu K
AUID- ORCID: 0000-0003-2692-1935
FAU - Liang, Jierui
AU  - Liang J
AUID- ORCID: 0000-0003-1207-8959
FAU - Woeppel, Aaron
AU  - Woeppel A
FAU - Bostian, M Eli
AU  - Bostian ME
FAU - Ding, Hangjun
AU  - Ding H
FAU - Chao, Zhongmou
AU  - Chao Z
AUID- ORCID: 0000-0002-9882-4440
FAU - McKone, James R
AU  - McKone JR
AUID- ORCID: 0000-0001-6445-7884
FAU - Beckman, Eric J
AU  - Beckman EJ
FAU - Fullerton-Shirey, Susan K
AU  - Fullerton-Shirey SK
AUID- ORCID: 0000-0003-2720-0400
LA  - eng
PT  - Journal Article
DEP - 20190917
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - EDLT
OT  - electric double layer
OT  - field-effect transistor
OT  - ion gating
OT  - iontronics
OT  - single-ion conductor
OT  - two-dimensional
EDAT- 2019/09/06 06:00
MHDA- 2019/09/06 06:01
CRDT- 2019/09/06 06:00
PHST- 2019/09/06 06:00 [pubmed]
PHST- 2019/09/06 06:01 [medline]
PHST- 2019/09/06 06:00 [entrez]
AID - 10.1021/acsami.9b11526 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2019 Oct 2;11(39):35879-35887. doi: 
      10.1021/acsami.9b11526. Epub 2019 Sep 17.