PMID- 31873168
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20201222
IS  - 2045-2322 (Electronic)
IS  - 2045-2322 (Linking)
VI  - 9
IP  - 1
DP  - 2019 Dec 23
TI  - Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper 
      Filled Micro-Trench Structure.
PG  - 19691
LID - 10.1038/s41598-019-56292-3 [doi]
LID - 19691
AB  - Self-heating effect is a major limitation in achieving the full performance 
      potential of high power GaN power devices. In this work, we reported a 
      micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high 
      electron mobility transistor (HEMT) via deep reactive ion etching, which was 
      subsequently filled with high thermal conductive material, copper using the 
      electroplating process. From the current-voltage characteristics, the saturation 
      drain current was improved by approximately 17% with the copper filled 
      micro-trench structure due to efficient heat dissipation. The I(DS) difference 
      between the pulse and DC bias measurement was about 21% at high bias V(DS) due to 
      the self-heating effect. In contrast, the difference was reduced to approximately 
      8% for the devices with the implementation of the proposed structure. Using 
      Micro-Raman thermometry, we showed that temperature near the drain edge of the 
      channel can be lowered by approximately ~22  degrees C in a HEMT operating at ~10.6 
      Wmm(-1) after the implementation of the trench structure. An effective method for 
      the improvement of thermal management to enhance the performance of 
      GaN-on-Silicon HEMTs was demonstrated.
FAU - Mohanty, Srikant Kumar
AU  - Mohanty SK
AD  - Department of Photonics, National Chiao Tung University, Hsinchu, 30010, Taiwan, 
      ROC.
FAU - Chen, Yu-Yan
AU  - Chen YY
AD  - Department of Physics, Tamkang University, New Taipei City, 25137, Taiwan, ROC.
FAU - Yeh, Ping-Hung
AU  - Yeh PH
AD  - Department of Physics, Tamkang University, New Taipei City, 25137, Taiwan, ROC.
FAU - Horng, Ray-Hua
AU  - Horng RH
AUID- ORCID: 0000-0002-1160-6775
AD  - Institute of Electronics, National Chiao Tung University, Hsinchu, 30010, Taiwan, 
      ROC. rhh@nctu.edu.tw.
AD  - Center for Emergent Functional Matter Science, National Chiao Tung University, 
      Hsinchu, 30010, Taiwan, ROC. rhh@nctu.edu.tw.
LA  - eng
GR  - 107-2218-E-009-056/Ministry of Science and Technology, Taiwan (Ministry of 
      Science and Technology of Taiwan)/
PT  - Journal Article
DEP - 20191223
PL  - England
TA  - Sci Rep
JT  - Scientific reports
JID - 101563288
SB  - IM
PMC - PMC6928204
COIS- The authors declare no competing interests.
EDAT- 2019/12/25 06:00
MHDA- 2019/12/25 06:01
PMCR- 2019/12/23
CRDT- 2019/12/25 06:00
PHST- 2019/06/26 00:00 [received]
PHST- 2019/12/05 00:00 [accepted]
PHST- 2019/12/25 06:00 [entrez]
PHST- 2019/12/25 06:00 [pubmed]
PHST- 2019/12/25 06:01 [medline]
PHST- 2019/12/23 00:00 [pmc-release]
AID - 10.1038/s41598-019-56292-3 [pii]
AID - 56292 [pii]
AID - 10.1038/s41598-019-56292-3 [doi]
PST - epublish
SO  - Sci Rep. 2019 Dec 23;9(1):19691. doi: 10.1038/s41598-019-56292-3.