PMID- 31898449
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200213
IS  - 1944-8252 (Electronic)
IS  - 1944-8244 (Linking)
VI  - 12
IP  - 6
DP  - 2020 Feb 12
TI  - Monolithically Integrated Enhancement-Mode and Depletion-Mode beta-Ga(2)O(3) MESFETs 
      with Graphene-Gate Architectures and Their Logic Applications.
PG  - 7310-7316
LID - 10.1021/acsami.9b19667 [doi]
AB  - Ultrawide band gap (UWBG) beta-Ga(2)O(3) is a promising material for next-generation 
      power electronic devices. An enhancement-mode (E-mode) device is essential for 
      designing power conversion systems with simplified circuitry and minimal loss. 
      The integration of an E-mode field-effect transistor (FET) with a depletion-mode 
      (D-mode) FET can build a high-performance logic circuit. In this study, we first 
      demonstrated the realization of an E-mode quasi-two-dimensional (quasi-2D) 
      beta-Ga(2)O(3) FET with a novel graphene gate architecture via a van der Waals 
      heterojunction. Then, we monolithically integrated it with a D-mode quasi-2D 
      beta-Ga(2)O(3) FET, achieving an area-efficient logic circuit. The threshold voltage 
      of the n-channel UWBG beta-Ga(2)O(3) material was controlled by forming a novel 
      architecture of a double-gate graphene/beta-Ga(2)O(3) heterojunction, where both 
      graphene and beta-Ga(2)O(3) were obtained by a mechanical exfoliation method. The 
      fabricated double graphene-gate beta-Ga(2)O(3) metal-semiconductor FET (MESFET) was 
      operated in the E-mode with a positive threshold voltage of +0.25 V, which is 
      approximately 1.2 V higher than that of a single-gate D-mode beta-Ga(2)O(3) MESFET. 
      Both E-/D-modes beta-Ga(2)O(3) MESFETs showed excellent electrical characteristics 
      with a subthreshold swing of 68.9 and 84.6 mV/dec, respectively, and a high 
      on/off current ratio of approximately 10(7). A beta-Ga(2)O(3) logic inverter 
      composed of E-/D-mode beta-Ga(2)O(3) devices exhibited desired inversion 
      characteristics. The monolithic integration of an E-/D-mode quasi-2D FET with an 
      UWBG channel layer can pave the way for various applications in smart and robust 
      power (nano) electronics.
FAU - Kim, Janghyuk
AU  - Kim J
AD  - Department of Chemical and Biological Engineering , Korea University , Seoul 
      02841 , South Korea.
FAU - Kim, Jihyun
AU  - Kim J
AUID- ORCID: 0000-0002-5634-8394
AD  - Department of Chemical and Biological Engineering , Korea University , Seoul 
      02841 , South Korea.
LA  - eng
PT  - Journal Article
DEP - 20200116
PL  - United States
TA  - ACS Appl Mater Interfaces
JT  - ACS applied materials & interfaces
JID - 101504991
SB  - IM
OTO - NOTNLM
OT  - depletion-mode FET
OT  - enhancement-mode FET
OT  - gallium oxide
OT  - two-dimensional material
OT  - ultrawide band gap
EDAT- 2020/01/04 06:00
MHDA- 2020/01/04 06:01
CRDT- 2020/01/04 06:00
PHST- 2020/01/04 06:00 [pubmed]
PHST- 2020/01/04 06:01 [medline]
PHST- 2020/01/04 06:00 [entrez]
AID - 10.1021/acsami.9b19667 [doi]
PST - ppublish
SO  - ACS Appl Mater Interfaces. 2020 Feb 12;12(6):7310-7316. doi: 
      10.1021/acsami.9b19667. Epub 2020 Jan 16.