PMID- 31936651
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 11
IP  - 1
DP  - 2020 Jan 9
TI  - Transient Simulation for the Thermal Design Optimization of Pulse Operated 
      AlGaN/GaN HEMTs.
LID - 10.3390/mi11010076 [doi]
LID - 76
AB  - The thermal management and channel temperature evaluation of GaN power amplifiers 
      are indispensable issues in engineering field. The transient thermal 
      characteristics of pulse operated AlGaN/GaN high electron mobility transistors 
      (HEMT) used in high power amplifiers are systematically investigated by using 
      three-dimensional simulation with the finite element method. To improve the 
      calculation accuracy, the nonlinear thermal conductivities and near-junction 
      region of GaN chip are considered and treated appropriately in our numerical 
      analysis. The periodic transient pulses temperature and temperature distribution 
      are analyzed to estimate thermal response when GaN amplifiers are operating in 
      pulsed mode with kilowatt-level power, and the relationships between channel 
      temperatures and pulse width, gate structures, and power density of GaN device 
      are analyzed. Results indicate that the maximal channel temperature and thermal 
      impedance of device are considerably influenced by pulse width and power density 
      effects, but the changes of gate fingers and gate width have no effect on channel 
      temperature when the total gate width and active area are kept constant. Finally, 
      the transient thermal response of GaN amplifier is measured using IR thermal 
      photogrammetry, and the correctness and validation of the simulation model is 
      verified. The study of transient simulation is demonstrated necessary for optimal 
      designs of pulse-operated AlGaN/GaN HEMTs.
FAU - Guo, Huaixin
AU  - Guo H
AD  - Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, 
      Nanjing Electronic Devices Institute, Nanjing 210016, China.
FAU - Chen, Tangsheng
AU  - Chen T
AD  - Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, 
      Nanjing Electronic Devices Institute, Nanjing 210016, China.
FAU - Shi, Shang
AU  - Shi S
AD  - Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, 
      Nanjing Electronic Devices Institute, Nanjing 210016, China.
LA  - eng
GR  - 2017 YFB0406100/National Key Research and Development Program/
PT  - Journal Article
DEP - 20200109
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC7020000
OTO - NOTNLM
OT  - AlGaN/GaN HEMTs
OT  - gate structures
OT  - pulse width
OT  - thermal simulation
OT  - transient channel temperature
COIS- The authors declare no conflict of interest.
EDAT- 2020/01/16 06:00
MHDA- 2020/01/16 06:01
PMCR- 2020/01/09
CRDT- 2020/01/16 06:00
PHST- 2019/11/30 00:00 [received]
PHST- 2019/12/31 00:00 [revised]
PHST- 2020/01/07 00:00 [accepted]
PHST- 2020/01/16 06:00 [entrez]
PHST- 2020/01/16 06:00 [pubmed]
PHST- 2020/01/16 06:01 [medline]
PHST- 2020/01/09 00:00 [pmc-release]
AID - mi11010076 [pii]
AID - micromachines-11-00076 [pii]
AID - 10.3390/mi11010076 [doi]
PST - epublish
SO  - Micromachines (Basel). 2020 Jan 9;11(1):76. doi: 10.3390/mi11010076.