PMID- 31968436
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200304
IS  - 1533-4899 (Electronic)
IS  - 1533-4880 (Linking)
VI  - 20
IP  - 7
DP  - 2020 Jul 1
TI  - Effects of Recess Depth Under the Gate Area on the V(th)-Shift for Fabricating 
      Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures.
PG  - 4170-4175
LID - 10.1166/jnn.2020.17783 [doi]
AB  - Fabrication of normally-off field effect transistors (FETs) possessed uniform 
      turn-on threshold voltage (V(th)) is of special interests. In this work, they 
      were fabricated using dry etching recess techniques under the gate region, with 
      dry etching conditions of extremely low rate. We report how the recess depth 
      under the gate area induced the V(th) shift of normally-off FETs on AlGaN/GaN 
      heterostructure, which were fabricated with a 1.5 nm/min etching rate. 
      Chlorine-based inductively coupled plasma (ICP) was applied to perform the 
      etching process for the AlGaN/GaN heterostructure. Devices were fabricated with 
      different recess depths under the gate area, and examined to determine their 
      performances, particularly the dependence of recess time and recess depth on 
      V(th) shift. The applied dry etching conditions resulted in a low-damaged and 
      not-rough morphology on the etched surfaces of AlGaN/GaN. Fine controlled and 
      well defined recess depth of the AlGaN/GaN heterostructure under the gate region 
      was achieved with no etch-stop layers. Conventional fabrication processes were 
      applied with the dry etching conditions of extremely low rate to fabricate 
      normally-off MOSFETs of Al(2)O(3)/AlGaN/GaN. The achieved V(th) of +5.64 V was high 
      positive and the leakage current of off-state was measured as ~10(-6) A/mm.
FAU - Kim, Zin-Sig
AU  - Kim ZS
AD  - ICT Creative Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, 
      Korea.
FAU - Lee, Hyung Seok
AU  - Lee HS
AD  - ICT Creative Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, 
      Korea.
FAU - Bae, Sung-Bum
AU  - Bae SB
AD  - ICT Creative Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, 
      Korea.
FAU - Nam, Eun Soo
AU  - Nam ES
AD  - ICT Creative Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, 
      Korea.
FAU - Lim, Jong-Won
AU  - Lim JW
AD  - ICT Creative Research Laboratory, ETRI, 218 Gajeongno, Yuseong-Gu, Daejeon 34129, 
      Korea.
LA  - eng
PT  - Journal Article
PL  - United States
TA  - J Nanosci Nanotechnol
JT  - Journal of nanoscience and nanotechnology
JID - 101088195
SB  - IM
EDAT- 2020/01/24 06:00
MHDA- 2020/01/24 06:01
CRDT- 2020/01/24 06:00
PHST- 2020/01/24 06:00 [entrez]
PHST- 2020/01/24 06:00 [pubmed]
PHST- 2020/01/24 06:01 [medline]
AID - 10.1166/jnn.2020.17783 [doi]
PST - ppublish
SO  - J Nanosci Nanotechnol. 2020 Jul 1;20(7):4170-4175. doi: 10.1166/jnn.2020.17783.