PMID- 32104957
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200930
IS  - 1521-4095 (Electronic)
IS  - 0935-9648 (Linking)
VI  - 32
IP  - 16
DP  - 2020 Apr
TI  - An Integrated Flexible All-Nanowire Infrared Sensing System with Record 
      Photosensitivity.
PG  - e1908419
LID - 10.1002/adma.201908419 [doi]
AB  - Infrared (IR) photodetectors are a key optoelectronic device and have thus 
      attracted considerable research attention in recent years. Photosensitivity is an 
      increasingly important device performance parameter for nanoscale photodetectors 
      and image sensors, as it determines the ultimate imaging quality and contrast. 
      However, photosensitivities of state-of-the-art low-dimensional 
      nanostructure-based IR detectors are considerably low, limiting their practical 
      applications. Herein, a biomimetic IR detection amplification (IRDA) system that 
      boosts photosensitivity by several orders of magnitude by introducting nanowire 
      field effect transistors (FETs), resulting in a peak photosensitivity of 7.6 x 
      10(4) under an illumination of 1342 nm, is presented. Consequently, high-contrast 
      imaging of IR light is obtained on the flexible IRDA arrays. The image 
      information can be then trained and recognized by an artificial neural network 
      for higher image-recognition efficiency. This work provides a new perspective for 
      developing high-performance IR imaging systems, and is expected to undoubtedly 
      enlighten future work on artificial intelligence and biorobotic systems.
CI  - (c) 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
FAU - Ran, Wenhao
AU  - Ran W
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
FAU - Wang, Lili
AU  - Wang L
AD  - State Key Laboratory on Integrated Optoelectronics, College of Electronic Science 
      and Engineering, Jilin University, Changchun, 130012, P. R. China.
FAU - Zhao, Shufang
AU  - Zhao S
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
FAU - Wang, Depeng
AU  - Wang D
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
FAU - Yin, Ruiyang
AU  - Yin R
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
FAU - Lou, Zheng
AU  - Lou Z
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
FAU - Shen, Guozhen
AU  - Shen G
AUID- ORCID: 0000-0002-9755-1647
AD  - State Key Laboratory for Superlattices and Microstructures, Institute of 
      Semiconductors, Chinese Academy of Sciences and Center of Materials Science and 
      Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 
      100083, China.
LA  - eng
GR  - 61625404/National Science Foundation of China/
GR  - 61874111/National Science Foundation of China/
GR  - 61888102/National Science Foundation of China/
GR  - 2018QNRC001/Young Elite Scientists Sponsorship Program by CAST/
GR  - QYZDY-SSW-JWC004/Key Research Program of Frontier Sciences, CAS/
GR  - 61625404/National Natural Science Foundation of China/
GR  - 61874111/National Natural Science Foundation of China/
GR  - 61888102/National Natural Science Foundation of China/
PT  - Journal Article
DEP - 20200227
PL  - Germany
TA  - Adv Mater
JT  - Advanced materials (Deerfield Beach, Fla.)
JID - 9885358
SB  - IM
OTO - NOTNLM
OT  - flexible amplifier systems
OT  - image recognition
OT  - infrared image sensors
OT  - nanowires
OT  - record photosensitivity
EDAT- 2020/02/28 06:00
MHDA- 2020/02/28 06:01
CRDT- 2020/02/28 06:00
PHST- 2019/12/23 00:00 [received]
PHST- 2020/02/06 00:00 [revised]
PHST- 2020/02/28 06:00 [pubmed]
PHST- 2020/02/28 06:01 [medline]
PHST- 2020/02/28 06:00 [entrez]
AID - 10.1002/adma.201908419 [doi]
PST - ppublish
SO  - Adv Mater. 2020 Apr;32(16):e1908419. doi: 10.1002/adma.201908419. Epub 2020 Feb 
      27.