PMID- 32121721
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200303
IS  - 1094-4087 (Electronic)
IS  - 1094-4087 (Linking)
VI  - 28
IP  - 4
DP  - 2020 Feb 17
TI  - Passive terahertz imaging detectors based on antenna-coupled 
      high-electron-mobility transistors.
PG  - 4911-4920
LID - 10.1364/OE.385042 [doi]
AB  - Aiming at the requirement of passive terahertz imaging, we report a 
      high-sensitivity terahertz detector based on an antenna-coupled AlGaN/GaN 
      high-electron-mobility transistor (HEMT) at 77 K without using low-noise 
      terahertz amplifier. The measured optical noise-equivalent power and the 
      noise-equivalent temperature difference of the detector were about 0.3p W/H z and 
      370 mK in a 200 ms integration time over a bandwidth of 0.7 - 0.9 THz, 
      respectively. By using this detector, we demonstrated passive terahertz imaging 
      of room-temperature objects with signal-to-noise ratio up to 13 dB. Further 
      improvement in the sensitivity may allow passive terahertz imaging using 
      AlGaN/GaN-HEMT at room temperature.
FAU - Sun, Jiandong
AU  - Sun J
FAU - Zhu, Yifan
AU  - Zhu Y
FAU - Feng, Wei
AU  - Feng W
FAU - Ding, Qingfeng
AU  - Ding Q
FAU - Qin, Hua
AU  - Qin H
FAU - Sun, Yunfei
AU  - Sun Y
FAU - Zhang, Zhipeng
AU  - Zhang Z
FAU - Li, Xiang
AU  - Li X
FAU - Zhang, Jinfeng
AU  - Zhang J
FAU - Li, Xinxing
AU  - Li X
FAU - Shangguan, Yang
AU  - Shangguan Y
FAU - Jin, Lin
AU  - Jin L
LA  - eng
PT  - Journal Article
PL  - United States
TA  - Opt Express
JT  - Optics express
JID - 101137103
SB  - IM
EDAT- 2020/03/04 06:00
MHDA- 2020/03/04 06:01
CRDT- 2020/03/04 06:00
PHST- 2020/03/04 06:00 [entrez]
PHST- 2020/03/04 06:00 [pubmed]
PHST- 2020/03/04 06:01 [medline]
AID - 426650 [pii]
AID - 10.1364/OE.385042 [doi]
PST - ppublish
SO  - Opt Express. 2020 Feb 17;28(4):4911-4920. doi: 10.1364/OE.385042.