PMID- 32252460
OWN - NLM
STAT- PubMed-not-MEDLINE
LR  - 20200928
IS  - 2072-666X (Print)
IS  - 2072-666X (Electronic)
IS  - 2072-666X (Linking)
VI  - 11
IP  - 4
DP  - 2020 Apr 2
TI  - Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer 
      Systems.
LID - 10.3390/mi11040375 [doi]
LID - 375
AB  - In this paper, we demonstrate a compact 20-W GaN internally matched power 
      amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant 
      substrate, single-layer capacitors, and shunt/series resistors for low-Q matching 
      and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) 
      CGH60030D bare die from Wolfspeed was used as an active device, and input/output 
      matching circuits were implemented on two different substrates using a thin-film 
      process, relative dielectric constants of which were 9.8 and 40, respectively. A 
      series resistor of 2.1 Omega was chosen to minimize the high-frequency loss and 
      obtain a flat gain response. For the output matching circuit, double lambda/4 shorted 
      stubs were used to supply the drain current and reduce the output impedance 
      variation of the transistor between the low-frequency and high-frequency regions, 
      which also made wideband matching feasible. Single-layer capacitors effectively 
      helped reduce the size of the matching circuit. The fabricated GaN internally 
      matched power amplifier showed a linear gain of about 10.2 dB, and had an output 
      power of 43.3-43.9 dBm (21.4-24.5 W), a power-added efficiency of 33.4%-49.7% and 
      a power gain of 6.2-8.3 dB at the continuous-wave output power condition, from 
      2.5 to 6 GHz.
FAU - Lee, Min-Pyo
AU  - Lee MP
AD  - Department of Radio and Information Communications Engineering, Chungnam National 
      University, Daejeon 34134, Korea.
FAU - Kim, Seil
AU  - Kim S
AD  - Department of Radio and Information Communications Engineering, Chungnam National 
      University, Daejeon 34134, Korea.
FAU - Hong, Sung-June
AU  - Hong SJ
AD  - Department of Radio and Information Communications Engineering, Chungnam National 
      University, Daejeon 34134, Korea.
FAU - Kim, Dong-Wook
AU  - Kim DW
AD  - Department of Radio and Information Communications Engineering, Chungnam National 
      University, Daejeon 34134, Korea.
LA  - eng
PT  - Journal Article
DEP - 20200402
PL  - Switzerland
TA  - Micromachines (Basel)
JT  - Micromachines
JID - 101640903
PMC - PMC7231133
OTO - NOTNLM
OT  - GaN
OT  - HEMT
OT  - jammer system
OT  - power amplifier
OT  - wideband
COIS- The authors declare no conflict of interest.
EDAT- 2020/04/08 06:00
MHDA- 2020/04/08 06:01
PMCR- 2020/04/02
CRDT- 2020/04/08 06:00
PHST- 2020/02/25 00:00 [received]
PHST- 2020/03/29 00:00 [revised]
PHST- 2020/04/01 00:00 [accepted]
PHST- 2020/04/08 06:00 [entrez]
PHST- 2020/04/08 06:00 [pubmed]
PHST- 2020/04/08 06:01 [medline]
PHST- 2020/04/02 00:00 [pmc-release]
AID - mi11040375 [pii]
AID - micromachines-11-00375 [pii]
AID - 10.3390/mi11040375 [doi]
PST - epublish
SO  - Micromachines (Basel). 2020 Apr 2;11(4):375. doi: 10.3390/mi11040375.